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首页> 外文期刊>Organic Electronics >Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions
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Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions

机译：在环境条件下制备高迁移率的聚（3-己基噻吩）晶体管

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摘要

We report on the fabrication of high-mobility organic thin-film transistors (OTFTs) made and tested under ambient conditions. A bottom gate, bottom contact architecture was used with a layer of poly(3-hexylthiophene) deposited on a 50 nm thick Al_2O_3 dielectric with pre-patterned Au source and drain electrodes. Fluoroalkyl trichlorosilane treatment of the Al_2O_3 dielectric was found to significantly improve device performance. The field-effect hole mobility reproducibly reached 0.2 cm~2 V~(-1) s~(-1) (best device 0.29 cm2 V~(-1) s~(-1)) with an on/off ratio of 10~4. Electrical and synchrotron X-ray scattering characterization shows that an interaction at the FOTS/P3HT interface is responsible for the high performance of these devices. The fabrication method described here is carried out under ambient conditions and does not require any post-deposition annealing or vacuum drying steps for the organic film; therefore it can simplify the manufacturing of OTFTs.
机译：我们报告在环境条件下制造和测试的高迁移率有机薄膜晶体管（OTFT）的制造。使用底栅底部接触结构，并在具有预先构图的Au源电极和漏电极的50 nm厚Al_2O_3电介质上沉积一层聚（3-己基噻吩）。发现Al_2O_3电介质的氟代烷基三氯硅烷处理可显着改善器件性能。场效应空穴迁移率可再现地达到0.2 cm〜2 V〜（-1）s〜（-1）（最佳器件为0.29 cm2 V〜（-1）s〜（-1）），开/关比为10 〜4。电和同步加速器X射线散射特性表明，FOTS / P3HT接口上的相互作用是这些设备高性能的原因。这里描述的制造方法是在环境条件下进行的，不需要对有机膜进行任何沉积后退火或真空干燥步骤。因此可以简化OTFT的制造。

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  • 来源
    《Organic Electronics》 |2010年第9期|P.1507-1510|共4页
  • 作者

    Dmitry A. Lyashenko; Alexander A. Zakhidov; Vladimir A. Pozdin; George G. Malliaras;

  • 作者单位

    Department of Physics and Mathematics, University of Eastern Finland. Joensuu, 80100, Finland Depanment of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853-1501, USA;

    Depanment of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853-1501, USA;

    Depanment of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853-1501, USA;

    Depanment of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853-1501, USA;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    organic electronics; organic thin-film transistors;

    机译：有机电子产品;有机薄膜晶体管;

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