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首页> 外文期刊>Philips Journal of Research >HIGH-VOLTAGE STABILITY COATINGS IN THE ZEUS PANEL
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HIGH-VOLTAGE STABILITY COATINGS IN THE ZEUS PANEL

机译：宙斯面板中的高压稳定涂层

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摘要

High-voltage stability in the Zeus panel can be obtained by applying a resistivity layer and a low secondary-electron-emission layer. The coverage of the selection side and the entrance of the holes with the resistivity layer is of particular importance for a good panel performance. The coatings were prepared by sputtering silicon nitride films and by spraying chromium oxide and silicon nitride particle layers.The resistance of the films applied by sputtering depends on sputtering conditions such as the nitrogen flow, the deposition rate and the substrate temperature. Post-annealing causes a large, but reproducible, increase in the resistivity, due to a decrease in the number of dangling bonds. Panel performance is optimal when a 200-nm-thick resistivity layer with a sheet resistance of about 10~(11) Ω/□ is applied in combination with a low-δ coating covering the walls of the holes. An acceleration voltage of about 7kV can be applied without the occurrence of flashovers. The starry sky intensity is about 0.1Cd/m~2 at 6kV. When spraying Cr_2O_3 resistivity layers, the roughness of the layers should be low. This can be achieved by using a stable well-dispersed suspension and applying the proper spraying conditions, such that the drying of the layers is controlled. The panel performance of these layers is excellent. Application of a low-δ coating only gives a minor additional improvement. Flashovers are suppressed for applied voltages larger than 8 kV and the starry sky intensity is about 0.1 Cd/m~2 at 6 kV.
机译：可以通过施加电阻率层和低二次电子发射层来获得Zeus面板中的高电压稳定性。对于良好的面板性能而言，选择侧的覆盖以及电阻层的孔的入口特别重要。通过溅射氮化硅膜以及喷涂氧化铬和氮化硅颗粒层来制备涂层。通过溅射施加的膜的电阻取决于溅射条件，例如氮气流量，沉积速率和基板温度。由于悬空键数量的减少，退火后会引起电阻率的大幅度提高，但可重现。当将200nm厚的薄层电阻约为10〜（11）Ω/□的电阻率层与覆盖孔壁的低δ涂层结合使用时，面板性能最佳。可以施加约7kV的加速电压，而不会发生闪络。在6kV时，星空强度约为0.1Cd / m〜2。喷涂Cr_2O_3电阻率层时，层的粗糙度应低。这可以通过使用稳定且分散良好的悬浮液并施加适当的喷涂条件来实现，从而控制各层的干燥。这些层的面板性能非常好。低δ涂层的应用只会带来较小的额外改进。对于大于8 kV的施加电压，闪络得到抑制，并且在6 kV时，星空强度约为0.1 Cd / m〜2。

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