Superlattice-like stacking fault array in ion-irradiated GaN

Manabu Ishimarua* Igor O. Usovb Yanwen Zhangcd amp; William J. Webercd

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Superlattice-like stacking fault array in ion-irradiated GaN

机译：离子辐照GaN中的超晶格状堆叠断层阵列

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Controlling defects in crystalline solids is of technological importance for realizing desirable material properties. Irradiation with energetic particles is useful for designing the spatial distribution and concentration of defects in materials. Here, we performed ion irradiation into hexagonal GaN with the wurtzite structure and demonstrated the spontaneous formation of superlattice-like stacking fault arrays. It was found that the modulation period can be controlled by varying the irradiation conditions and subsequent thermal treatments.View full textDownload full textKeywordsdefect structures, ion irradiation, TEM, superlattices, self-assembly, defect engineeringRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2011.630686

机译：控制结晶固体中的缺陷对于实现所需的材料性能具有重要的技术意义。用高能粒子照射可用于设计材料中缺陷的空间分布和浓度。在这里，我们对具有纤锌矿结构的六方氮化镓进行了离子辐照，并证明了超晶格状堆叠断层阵列的自发形成。结果发现，可以通过改变辐照条件和后续热处理来控制调制周期。查看全文下载全文关键字缺陷结构，离子辐照，TEM，超晶格，自组装，缺陷工程相关的var addthis_config = {ui_cobrand：“泰勒和弗朗西斯在线”，services_compact：“ citeulike，netvibes，twitter，technorati，可口，linkedin，facebook，stumbleupon，digg，google，更多”，发布号：“ ra-4dff56cd6bb1830b”};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500839.2011.630686

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《Philosophical Magazine Letters》 |2012年第1期|p.49-55|共7页
作者
Manabu Ishimarua* Igor O. Usovb Yanwen Zhangcd amp; William J. Webercd;
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1. Superlattice-like stacking fault array in ion-irradiated GaN [J] . Manabu Ishimaru, Igor O. Usov, Yanwen Zhang Philosophical Magazine Letters . 2012,第1a3期

机译：离子照射GaN中的超晶格状堆叠故障阵列
2. Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults [J] . Florian Tendille, Philippe De Mierry, Philippe Vennegues, Journal of Crystal Growth . 2014,第octa15期

机译：通过MOCVD在图案化蓝宝石衬底上生长的（11-22）半极性GaN中的缺陷减少方法：向无基础堆叠缺陷的异质外延半极性GaN迈进
3. Reduction of stacking faults in (1120) and (1122) GaN films by ELO techniques and benefit on GaN wells emission [J] . Bougrioua Z, Laugt M, Vennegues P, Physica Status Solidi. A, Applications and Materials Science . 2007,第1期

机译：通过ELO技术减少（1120）和（1122）GaN膜中的堆叠缺陷并有益于GaN阱发射
4. Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN [C] . Morteza Monavarian, Shopan Hafiz, Natalia Izyumskaya, Gallium nitride materials and devices XI . 2016

机译：半极性GaN基面堆叠断层中的纤锌矿/闪锌矿电子带对准
5. A first-principles study of stacking faults and long periodic stacking order structures in Mg and Mg alloys [D] . Wang, Yi. 2013

机译：Mg和Mg合金堆垛层错和长周期堆垛有序结构的第一性原理研究
6. Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes [O] . Y. Zhang, R. M. Smith, L. Jiu, -1

机译：共聚焦光致发光研究以识别基础堆叠缺陷在半极性InGaN / GaN发光二极管的光学特性中的作用
7. Alloy segregation at stacking faults in zincblende GaN heterostructures [O] . B. Ding, M. Frentrup, S. M. Fairclough, 2020

机译：合金偏析在锌苄德甘异质结构中堆叠故障

Superlattice-like stacking fault array in ion-irradiated GaN

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