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首页> 外文期刊>Photonics Journal, IEEE >An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques
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An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques

机译：基于结构掺杂硅的抗反射技术的超宽带太赫兹吸收器

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摘要

Broadband absorber in the terahertz region (0.1–10 THz) has attracted considerable attentions due to its important applications in detecting, imaging, and electromagnetic stealth. Recently, terahertz absorber with broadband features has been widely investigated, however, the achievement of ultrabroad bandwidth is still challenging due to the limitations of complex structural design and fabrication processes. In this paper, an ultrabroadband terahertz absorber covering the entire terahertz regime (0.1–10 THz) based on the heavily doped silicon has been designed and fabricated, which is composed of double-layer binary gratings filled with the SU-8 photoresist. Antireflection techniques (SU-8 layer) were utilized to further promote the performance of the terahertz absorber at high frequencies through matching the impedance between free space and doped-silicon substrate. The measured absorption exceeding 87% within the frequency range of 0.3–10 THz has verified the proposed approach in designing the ultrabroadband terahertz absorber. Furthermore, the designed absorber remains high performance in the case of wide-angle incidence even up to 60°. Benefiting from the simple structure, the absorber is easy to be fabricated by common optical lithography. We believe that the results of this paper could broaden the application areas of terahertz absorbers.
机译：太赫兹区域（0.1-10 THz）的宽带吸收器由于其在检测，成像和电磁隐身方面的重要应用而备受关注。近来，具有宽带特性的太赫兹吸收器已被广泛研究，然而，由于复杂的结构设计和制造工艺的局限性，超宽带的实现仍具有挑战性。在本文中，已经设计和制造了一种基于重掺杂硅的，覆盖整个太赫兹范围（0.1-10 THz）的超宽带太赫兹吸收器，它由填充有SU-8光致抗蚀剂的双层二元光栅组成。通过使自由空间和掺杂硅衬底之间的阻抗匹配，利用抗反射技术（SU-8层）进一步提高了太赫兹吸收器在高频下的性能。在0.3–10 THz的频率范围内，测得的吸收超过87％，已经验证了设计超宽带太赫兹吸收器的建议方法。此外，即使在高达60°的广角入射情况下，设计的吸收器仍可保持高性能。得益于简单的结构，吸收器易于通过普通的光学光刻来制造。我们相信本文的结果可以拓宽太赫兹吸收器的应用领域。

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  • 来源
    《Photonics Journal, IEEE》 |2018年第6期|1-10|共10页
  • 作者

    Jing Yuan; Jun Luo; Ming Zhang; Mingbo Pu; Xiong Li; Zeyu Zhao; Xiangang Luo;

  • 作者单位

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

    State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China;

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  • 正文语种 eng
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  • 关键词

    Absorption; Silicon; Bandwidth; Gratings; Resists; Substrates; Reflection;

    机译：吸收;硅;带宽;光栅;抗蚀剂;基材;反射;

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