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首页> 外文期刊>Photonics Journal, IEEE >Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling
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Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

机译：基于乘法缩放的背照式AlGaN紫外雪崩光电二极管性能调制

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摘要

Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 x 10(4), higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties.
机译：在具有独立的吸收和倍增结构的AlN模板上制作了各种倍增宽度的背照式Al0.1Ga0.9N紫外雪崩光电二极管（APD）。研究了倍增比例对设备性能的影响。发现雪崩击穿电压随着倍增层厚度（MLT）的增加而增加。具有230 nm-MLT的APD实现了5.4 x 10（4）的优异最大倍增增益，高于具有150 nm和300 nm-MLT的器件所获得的最大倍增增益。理论仿真表明，雪崩区的临界电场强度将随着MLT的升高而降低，表明倍增比例对AlGaN APD性能的调制能力。此外，采用在不同AlN模板上制造的APD来研究晶体质量对器件性能的影响。

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  • 来源
    《Photonics Journal, IEEE》 |2019年第3期|1-7|共7页
  • 作者

    Cai Qing; Li Qian; Li Mo; Tang Yin; Wang Jin; Xue Junjun; Chen Dunjun; Lu Hai; Zhang Rong; Zheng Youdou;

  • 作者单位

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

    China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610054, Sichuan, Peoples R China|China Acad Engn Phys, Inst Elect Engn, Chengdu 610054, Sichuan, Peoples R China;

    China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610054, Sichuan, Peoples R China|China Acad Engn Phys, Inst Elect Engn, Chengdu 610054, Sichuan, Peoples R China;

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ Posts & Telecommun, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China;

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

    Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    AlGaN; ultraviolet; avalanche photodiodes; multiplication scaling;

    机译：AlGaN;紫外线;雪崩光电二极管;倍增缩放;

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