...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure
【24h】

Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure

机译：通过单独的吸收和倍增结构直接观察后照明Algan雪崩光电二极管的临时行为

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A back-illuminated heterostructure AlGaN avalanche photodiode (APD) was fabricated with a separate absorption and multiplication (SAM) structure. The SAM structure is able to modulate the electric field distribution of the photodetector and induce a single carrier to trigger an avalanche event. The fabricated p-i-n-i-n APD exhibited a superior maximum gain of 1.8 x 10(5)at 70 V and distinct solar-blind responsivity peak at 280 nm. However, before the avalanche occurs, the SAM APD needs to be reached through for facilitating carrier transport. By investigating the capacitance characteristics of the SAM APD, the reach-through behavior was directly observed. The capacitance of the detector demonstrated evident declining trends with the applied voltage in the range of 18 to 24 V at different frequencies. The simulated electric field and energy band also revealed that the absorption region was initially reached through at 18 V reverse bias, corresponding to the depletion of n-type interlayer into the absorption region. Meanwhile, there were large differences in capacitances between low and high frequencies, which indicated the effects of impurity and defect states. These findings explicitly reveal the reach-through mechanism of the SAM APD, which is beneficial to the better understanding of device physics and further APD design.
机译：用单独的吸收和倍增（SAM）结构制造后照明异质结构AlGaN雪崩光电二极管（APD）。 SAM结构能够调制光电检测器的电场分布，并诱导单个载波以触发雪崩事件。制造的P-I-N-I-N APD在70V的70V和不同的太阳盲响应峰处表现出1.8×10（5）的优异最大增益，在280nm处。然而，在发生雪崩之前，需要达到SAM APD来促进载体运输。通过研究SAM APD的电容特性，直接观察到达到的行为。检测器的电容证明了在不同频率下施加电压的明显下降趋势。模拟电场和能量带还显示出在18V反向偏压下最初达到吸收区，对应于N型中间层的耗尽到吸收区域。同时，低频和高频之间的电容存在较大差异，这表明了杂质和缺陷状态的影响。这些发现明确地揭示了SAM APD的覆盖机制，这有利于更好地理解设备物理和进一步的APD设计。

著录项

  • 来源
  • 作者

    Cai Qing; Luo Weike; Guo Hui; Wang Jin; Tang Yin; Xue Junjun; Li Qian; Li Mo; Chen Dunjun; Lu Hai; Zhang Rong; Zheng Youdou;

  • 作者单位

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Elect Devices Inst Nanjing 210016 Peoples R China;

    Nanjing Univ Posts &

    Telecommun Sch Elect Sci &

    Engn Nanjing 210023 Peoples R China;

    China Acad Engn Phys Microsyst &

    Terahertz Res Ctr Chengdu 610000 Peoples R China;

    China Acad Engn Phys Microsyst &

    Terahertz Res Ctr Chengdu 610000 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Sch Elect Sci &

    Engn Key Lab Adv Photon &

    Elect Mat Nanjing 210093 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

    AlGaN; avalanche; reach-through;

    机译：Algan;雪崩;达到;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号