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Advanced thin-film chip concepts for efficient InGaN solar cells

机译:用于高效InGaN太阳能电池的高级薄膜芯片概念

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摘要

Two chip concepts based on thin-film technology are presented and compared regarding their suitability for concentrating photovoltaic applications. The main difference is given by the n-contact design; the first concept relies on a metal grid (MG) while the second one is based on vias (V) connected from the bottom of the solar cell. Although the MG-chip demonstrated a better performance at low solar concentrations, the V-chip was found to be more efficient at high concentrations being the relevant operation range for InGaN-based solar cell applications. Detailed investigations of J-V characteristics applying varied light concentrations revealed a significantly lower series resistance as the main advantage of the V-concept leading to considerably better fill factors at high solar concentrations.
机译:提出了两种基于薄膜技术的芯片概念,并比较了它们在集中光伏应用中的适用性。主要区别在于n触点设计。第一个概念依赖于金属网格(MG),而第二个概念基于从太阳能电池底部连接的过孔(V)。尽管MG芯片在低太阳能浓度下表现出更好的性能,但发现V芯片在高浓度下更有效,这是基于InGaN的太阳能电池应用的相关工作范围。对使用不同光浓度的J-V特性进行的详细研究表明,作为V概念的主要优点,其串联电阻显着降低,这导致在高太阳光下的填充系数明显提高。

著录项

  • 来源
    《Physica status solidi》 |2015年第9期|2053-2058|共6页
  • 作者单位

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany,GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

    GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    chip technology; concentrated photovoltaic; InGaN; nitride; solar cell;

    机译:芯片技术;集中光伏氮化镓;氮化物太阳能电池;

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