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首页> 外文期刊>Physica status solidi >Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' [Phys. Status Solidi A 205, 1872 (2008)]
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Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' [Phys. Status Solidi A 205, 1872 (2008)]

机译：评论“基于GaN的稀磁半导体的顺磁共振和铁磁共振研究”。状态Solidi A 205，1872（2008）

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摘要

Recently, Kammermeier et al. (KD) reported on electron paramagnetic resonance (EPR) and ferromagnetic resonance (FMR) studies in the diluted magnetic semiconductor GaN:Gd (Kammermeier et al., Phys. Status Solidi A 205, 1872 (2008) [1]). They observed several broad resonance signals at temperatures below 50 K in samples grown by molecular beam epitaxy on 6H SiC. The angular dependence of two FMR-like lines was measured and reveal uniaxial behavior with opposite aniso-tropy. From the temperature dependence of the resonance field and the line width as well as the uniaxial behavior of the line positions the authors suggest a ferromagnetic origin. The discussed resonance lines are supposed to originate from GdN clusters with the same orientation to the crystal environment. Several observed weaker signals which were not discussed in detail were attributed to Gd clusters of different orientations.rnFurther, it is believed that signatures of isolated, paramagnetic Gd impurities are not visible in the resonance experiment, in particular, because the resonance field is presumable covered by the observed cavity and substrate signals. The authors did not perform a rigorous analysis of the observed angular dependence of the EPR line positions and their intensities with the corresponding Hamiltonian for the considered defect In addition they overlooked some well-known findings on the feature of high-spin systems in strong crystal fields. Most of their conclusions and interpretations turn out to be erroneous. Here, we show by computer simulation of the EPR spectrum that all observed Gd-related lines can be successfully explained by isolated Gd~(3+) on the two inequivalent Ga sites of the hexagonal GaN lattice considering the fine-structure of the S= 7/2 system and the strain in the epitaxial layer.
机译：最近，Kammermeier等人。 （KD）报道了在稀释的磁性半导体GaN：Gd中的电子顺磁共振（EPR）和铁磁共振（FMR）研究（Kammermeier等人，Phys。Status Solidi A 205，1872（2008）[1]）。他们在分子束外延在6H SiC上生长的样品中观察到了低于50 K的温度下的多个宽共振信号。测量了两条FMR样线的角度依赖性，并揭示了具有相反各向异性的单轴行为。根据共振场和线宽的温度依赖性以及线位置的单轴行为，作者提出了铁磁起源。所讨论的共振线应该源自与晶体环境取向相同的GdN团簇。一些未详细讨论的观察到的较弱信号归因于不同方向的Gd团簇.rn此外，据信在共振实验中看不到孤立的顺磁性Gd杂质的特征，特别是因为共振场可能被覆盖通过观察到的空腔和基板信号。作者并未对所考虑的缺陷对所观察到的EPR线位置及其强度与相应的哈密顿量进行严格的角度依赖性分析。此外，他们忽略了有关强晶体场中高自旋系统特征的一些著名发现。 。他们的大多数结论和解释都证明是错误的。在这里，我们通过计算机模拟EPR谱表明，考虑到S =的精细结构，可以通过在六角形GaN晶格的两个不等价Ga位置上孤立Gd〜（3+）来成功解释所有观察到的Gd相关线。 7/2系统和外延层中的应变。

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  • 来源
    《Physica status solidi》 |2011年第8期|p.1953-1956|共4页
  • 作者

    W. Gehihoff; B. Salameh; A. Hoffmann;

  • 作者单位

    Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

    rnInstitut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany Department of Applied Physics, Tafila Technical University, Tafila 66110, Jordan;

    rnInstitut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

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  • 关键词

    GaN; Gd; electron paramagnetic resonance; ferromagnetism; strain;

    机译：氮化镓;Gd;电子顺磁共振铁磁性应变;

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