...
首页> 外文期刊>Physical review letters >Enhanced Photosusceptibility near T_c for the Light-Induced Insulator-to-Metal Phase Transition in Vanadium Dioxide
【24h】

Enhanced Photosusceptibility near T_c for the Light-Induced Insulator-to-Metal Phase Transition in Vanadium Dioxide

机译:二氧化钒中光诱导的绝缘体到金属相变的T_c附近增强的光敏性

获取原文
获取原文并翻译 | 示例
           

摘要

We use optical-pump terahertz-probe spectroscopy to investigate the near-threshold behavior of the photoinduced insulator-to-metal (IM) transition in vanadium dioxide thin films. Upon approaching T_c a reduction in the fluence required to drive the IM transition is observed, consistent with a softening of the insulating state due to an increasing metallic volume fraction (below the percolation limit). This phase coexistence facilitates the growth of a homogeneous metallic conducting phase following superheating via photoexcitation. A simple dynamic model using Bruggeman effective medium theory describes the observed initial condition sensitivity.
机译:我们使用光泵太赫兹探针光谱学来研究二氧化钒薄膜中光诱导的绝缘体到金属(IM)跃迁的近阈值行为。在接近T_c时,观察到驱动IM转变所需的通量降低,这与由于金属体积分数增加(低于渗透极限)而引起的绝缘状态的软化相一致。该相共存有助于在通过光激发过热后均匀金属导电相的生长。使用Bruggeman有效介质理论的简单动态模型描述了观察到的初始条件敏感性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号