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Atomic-scale mechanism of internal structural relaxation screening at polar interfaces

机译:极性界面内部结构弛豫筛选的原子尺度机理

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摘要

The effective screening of the polarization bound charge is a prerequisite to stabilize the ferroelectricity in ferroelectric thin films. Here, by combining annular bright field imaging and electron energy-loss spectroscopy (EELS) in an aberration-corrected scanning transmission electron microscope with phase-field simulations, we investigate the screening mechanism by quantitatively measuring the structural relaxation at Pb(Zr_(0.2)Ti_(0.8))O_3/SrTiO_3 interfaces. We find that the thickness of the interfacial layer is ~3.5 unit cells (~1.4nm)in a domain with upward polarization and ~5.5 unit cells (~2.2 nm) in a domain with downward polarization. Phase-field simulations, an EELS analysis, and a lattice parameter analysis verify the existence of interfacial oxygen vacancies accounting for the narrower interfacial layer in the domain with upward polarization. Our study indicates the internal structural relaxation at the interface is the dominant mechanism for the polarization charge screening for ferroelectric films grown on insulating substrates and has implications for our understanding of domain switching in ferroelectric devices.
机译:有效筛选极化束缚电荷是稳定铁电薄膜中铁电的先决条件。在这里,通过将像差校正扫描透射电子显微镜中的环形明场成像和电子能量损失谱(EELS)相结合,并通过相场模拟,我们通过定量测量Pb(Zr_(0.2) Ti_(0.8))O_3 / SrTiO_3接口。我们发现,界面层的厚度在向上极化的区域中为〜3.5晶胞(〜1.4nm),在向下极化的区域中为〜5.5晶胞(〜2.2 nm)。相场模拟,EELS分析和晶格参数分析验证了界面氧空位的存在,这说明了向上极化域中的界面层较窄。我们的研究表明,界面处的内部结构弛豫是在绝缘基板上生长的铁电薄膜进行极化电荷筛选的主要机制,这对我们对铁电器件中的畴转换的理解具有影响。

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  • 来源
    《Physical review》 |2018年第18期|180103.1-180103.7|共7页
  • 作者单位

    Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;

    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;

    Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China;

    Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu .30010, Taiwan, Republic of China;

    Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China,Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China,State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;

    Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu .30010, Taiwan, Republic of China,Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Republic of China;

    Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China,State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China,Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China;

    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656, Japan,Nanostructures Research Laboratory, Japan Line Ceramic Centre, Nagoya 456-8587, Japan;

    Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China,Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China;

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