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首页> 外文期刊>Physical review >Plastic pinning replaces collective pinning as the second magnetization peak disappears in the pnictide superconductor Ba_(0.75)K_(0.25)Fe_2As_2
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Plastic pinning replaces collective pinning as the second magnetization peak disappears in the pnictide superconductor Ba_(0.75)K_(0.25)Fe_2As_2

机译：塑性钉扎代替集体钉扎，因为第二个磁化峰在该超导体Ba_（0.75）K_（0.25）Fe_2As_2中消失了

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摘要

We report a detailed study of isofield magnetic relaxation and isothermal magnetization measurements with H || c on an underdoped Ba_(0.75)K_(0.25)Fe_2As_2 pnictide single crystal, with superconducting transition temperature T_c = 28 K. The second magnetization peak (SMP) has been observed at temperatures below T_c/2 and vanished at higher temperatures. The observed behavior of the SMP has been studied by measuring the magnetic field dependence of relaxation rate R(H) and by performing the Maley's analysis. The results suggest that the crossover from collective to plastic pinning observed in the SMP disappears above 12 K with plastic pinning replacing collective pinning. An interesting H-T phase diagram is obtained. The critical current density (J_c) was estimated using Bean's model and found to be ~3.4 x 109 A/m~2 at 10 K in the SMP region, which is comparable to an optimally doped Ba-KFe_2As_2 superconductor and may be exploited for potential technological applications. The pinning mechanism is found to be unconventional and does not follow the usual δ_l and δT_c pinning models, which suggest the intrinsic nature of pinning in the compound.
机译：我们报告了H ||等场磁场弛豫和等温磁化强度测量的详细研究。 c在未掺杂的Ba_（0.75）K_（0.25）Fe_2As_2锡化物单晶上，超导转变温度T_c = 28K。在低于T_c / 2的温度下观察到第二磁化峰（SMP），在更高的温度下消失。通过测量弛豫速率R（H）的磁场依赖性并通过进行马利分析来研究SMP的观测行为。结果表明，在12 K以上，从SMP中观察到的从集体钉扎到塑料钉扎的交叉消失，用塑料钉扎代替集体钉扎。获得了有趣的H-T相图。使用Bean模型估算了临界电流密度（J_c），发现在SMP区域10 K时的临界电流密度（J_c）为〜3.4 x 109 A / m〜2，可与最佳掺杂的Ba-KFe_2As_2超导体相媲美，并有可能被利用。技术应用。发现该钉扎机制是非常规的，并且不遵循通常的δ_1和δT_c钉扎模型，这表明了该化合物钉扎的内在本质。

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  • 来源
    《Physical review》 |2017年第13期|134509.1-134509.8|共8页
  • 作者

    Shyam Sundar; S. Salem-Sugui Jr.; H. S. Amorim; Hai-Hu Wen; K. A. Yates; L. F. Cohen; L. Ghivelder;

  • 作者单位

    Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ, Brazil;

    Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ, Brazil;

    Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ, Brazil;

    National Laboratory of Solid State Microstructures and Department of Physics, Innovative Center for Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    The Blackett Laboratory, Physics Department, Imperial College London, London SW7 2AZ, United Kingdom;

    The Blackett Laboratory, Physics Department, Imperial College London, London SW7 2AZ, United Kingdom;

    Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, RJ, Brazil;

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