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首页> 外文期刊>Physical review >Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers
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Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers

机译：过渡金属二卤化硅单层中暗激子的精细结构和寿命

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摘要

The intricate interplay between optically dark and bright excitons governs the light-matter interaction in transition metal dichalcogenide monolayers. We have performed a detailed investigation of the "spin-forbidden" dark excitons in WSe_2 monolayers by optical spectroscopy in an out-of-plane magnetic field B_z. In agreement with the theoretical predictions deduced from group theory analysis, magnetophotoluminescence experiments reveal a zero-field splitting S = 0.6 ± 0.1 meV between two dark exciton states. The low-energy state is strictly dipole forbidden (perfectly dark) at B_z = 0, while the upper state is partially coupled to light with z polarization ("gray" exciton). The first determination of the dark neutral exciton lifetime τ~D in a transition metal dichalcogenide monolayer is obtained by time-resolved photoluminescence. We measure τ~D ~ 110 ± 10 ps for the gray exciton state, i.e., two orders of magnitude longer than the radiative lifetime of the bright neutral exciton at T — 12 K.
机译：深色和明亮的光学激子之间复杂的相互作用决定了过渡金属二卤化硅单分子层中的光-物质相互作用。我们已经在平面外磁场B_z中通过光谱法对WSe_2单层中的“自旋禁止”暗激子进行了详细研究。与从群论分析得出的理论预测一致，磁光致发光实验表明在两个暗激子态之间的零场分裂S = 0.6±0.1 meV。在B_z = 0时，严格禁止低能态偶极子（完全黑暗），而在高能态下则部分耦合到具有z偏振的光（“灰色”激子）。通过时间分辨光致发光，可以初步确定过渡金属二卤化硅单层中暗中性激子的寿命τ〜D。对于灰色激子态，我们测量到τ〜D〜110±10 ps，即比T-12 K处的明亮中性激子的辐射寿命长两个数量级。

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  • 来源
    《Physical review》 |2017年第15期|155423.1-155423.8|共8页
  • 作者

    C. Robert; T. Amand; F. Cadiz; D. Lagarde; E. Courtade; M. Manca; T. Taniguchi; K. Watanabe; B. Urbaszek; X. Marie;

  • 作者单位

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan;

    National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

    Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France;

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