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Effects of nonequilibrium quasiparticles in a thin-film superconducting microwave resonator under optical illumination

机译：光学照射下薄膜超导微波谐振腔中非平衡准粒子的影响

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摘要

We have illuminated a thin-film superconducting Al lumped-element microwave resonator with 780 nm light and observed the resonator quality factor and resonance frequency as a function of illumination and microwave power in the 20 to 300 mK temperature range. The optically induced microwave loss increases with increasing illumination but decreases with increasing microwave power. Although this behavior may suggest the presence of optically activated two-level systems, we find that the loss is better explained by the presence of nonequilibrium quasiparticles generated by the illumination and excited by the microwave drive. We model the system by assuming that the illumination creates an effective source of phonons with energy higher than double the superconducting gap and solve the coupled quasiparticle-phonon rate equations. We fit the simulation results to our measurements and find good agreement with the observed dependence of the resonator quality factor and frequency shift on temperature, microwave power, and optical illumination. Examination of the model reveals approaches to reducing optically induced loss and improving the relaxation time of superconducting quantum devices.
机译：我们已经用780 nm的光照射了一个薄膜超导Al集总元件微波谐振器，并观察了谐振器质量因数和谐振频率与20至300 mK温度范围内照明和微波功率的关系。光致微波损耗随照明度的增加而增加，但随微波功率的增加而减小。尽管此行为可能表明存在光学激活的两能级系统，但我们发现通过照明产生并由微波驱动器激发的非平衡准粒子的存在可以更好地解释这种损失。我们通过假设照明产生的声子有效源来建模，该声子的能量高于超导间隙的两倍，并求解耦合的准粒子-声子速率方程。我们将仿真结果适合我们的测量结果，并与观察到的谐振器品质因数和频率偏移对温度，微波功率和光学照明的依赖关系很好地吻合。对模型的检验揭示了减少光致损耗并改善超导量子器件的弛豫时间的方法。

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  • 来源
    《Physical review》 |2016年第2期|024514.1-024514.10|共10页
  • 作者

    R. P. Budoyo; J. B. Hertzberg; C. J. Ballard; K. D. Voigt; Z. Kim; J. R. Anderson; C. J. Lobb; F. C. Wellstood;

  • 作者单位

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA,IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA,Agency for Defense Development, Yuseong, Daejeon 305-600, South Korea;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

    Joint Quantum Institute and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

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