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Superconductivity in noncentrosymmetric SrAuSi_3

机译：非中心对称SrAuSi_3中的超导

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摘要

Superconductivity in the noncentrosymmetric compound SrAuSi_3 [BaNiSn_3 type, Ⅰ4mm,a =4.4024(9) A, and c = 9.942(2) A] was studied by electrical resistivity, magnetic susceptibility, and specific heat measurements using single-phase polycrystalline samples, and ab initio band calculation. These measurements of the physical properties confirmed that the SrAuSi_3 phase shows bulk superconductivity with a critical temperature of T_C ～ 1.6 K and an upper critical field of H_(C2) ～ 1.8 kOe. In the superconducting state, the electronic specific heat exhibits a thermal-activation-type temperature dependence and the Sommerfeld constant γ linearly responds to magnetic fields for low-energy excitation. These results clearly indicate that SrAuSi_3 is a full-gap s-wave superconductor without a gap node in the superconducting order parameter. The density functional theory ab initio band calculation revealed that the electron system is composed of three kinds of Fermi surface: a cylindrical shape, a dumbbell shape, and a peculiar-shaped hole pocket. Fermi-surface splitting due to spin-orbit coupling exists only along limited directions in the Brillouin zone. Overall, the splitting energy size is small, insufficient to realize unconventional anisotropic superconductivity attributed to space-inversion symmetry breaking.
机译：使用单相多晶样品通过电阻率，磁化率和比热测量研究了非中心对称化合物SrAuSi_3 [BaNiSn_3型，Ⅰ4mm，a = 4.4024（9）A，c = 9.942（2）A]中的超导性，以及从头计算带。这些物理性质的测量结果证实，SrAuSi_3相显示出体超导性，其临界温度为T_C〜1.6 K，上临界场为H_（C2）〜1.8 kOe。在超导状态下，电子比热表现出热激活类型的温度依赖性，而Sommerfeld常数γ线性响应磁场以进行低能激发。这些结果清楚地表明，SrAuSi_3是全间隙s波超导体，在超导阶数参数中没有间隙节点。密度泛函理论从头算带计算表明，电子系统由三种费米表面组成：圆柱形，哑铃形和奇形的空穴。由于自旋轨道耦合引起的费米表面分裂仅在布里渊区中沿有限的方向存在。总体而言，分裂能的大小很小，不足以实现归因于空间反转对称性破坏的非常规各向异性超导性。

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  • 来源
    《Physical review》 |2016年第5期|054519.1-054519.11|共11页
  • 作者

    Masaaki Isobe; Masao Arai; Naoki Shirakawa;

  • 作者单位

    Superconducting Properties Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;

    Computational Materials Science Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;

    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan;

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