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Compliant substrate epitaxy: Au on MoS_2

机译：兼容的衬底外延：MoS_2上的Au

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摘要

A theory for the epitaxial growth of Au on MoS_2 is developed and analyzed. The theory combines continuum linear elasticity theory with density functional theory to analyze epitaxial growth in this system. It is demonstrated that if one accounts for interfacial energies and strains, the presence of misfit dislocations, and the compliance of the MoS_2 substrate, the experimentally observed growth orientation is favored despite the fact that it represents a larger elastic mismatch than two competing structures. The stability of the experimentally preferred orientation is attributed to the formation of a large number of strong Au-S bonds, and it is noted that this strong bond may serve as a means to exfoliate and transfer large single layers sheets of MoS_2, as well as to engineer strain within single layers of MoS_2. The potential for using a van der Waals-bonded layered material as a compliant substrate for applications in 2D electronic devices and epitaxial thin film growth is discussed.
机译：提出并分析了Au在MoS_2上外延生长的理论。该理论将连续线性弹性理论与密度泛函理论相结合，以分析该系统中的外延生长。结果表明，如果考虑界面能和应变，错配位错的存在以及MoS_2基底的顺应性，尽管它比两个竞争结构具有更大的弹性失配，但实验观察到的生长方向还是有利的。实验上优选取向的稳定性归因于大量强Au-S键的形成，并且应注意，这种强键可以用作剥落和转移MoS_2单层大片以及在单层MoS_2中设计应变。讨论了将范德华粘合层状材料用作2D电子设备和外延薄膜生长中的顺应性基材的潜力。

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  • 来源
    《Physical review》 |2016年第5期|054106.1-054106.10|共10页
  • 作者

    Yuzhi Zhou; Daisuke Kiriya; E. E. Haller; Joel W. Ager Ⅲ; Ali Javey; D. C. Chrzan;

  • 作者单位

    Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

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