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首页> 外文期刊>Journal of Crystal Growth >Lattice mismatched molecular beam epitaxy on compliant GaAs/Al_xO_y/GaAs substrates produced by lateral wet oxidation
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Lattice mismatched molecular beam epitaxy on compliant GaAs/Al_xO_y/GaAs substrates produced by lateral wet oxidation

机译：侧向湿式氧化产生的顺应性GaAs / Al_xO_y / GaAs衬底上的晶格失配分子束外延

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摘要

Large-area 16 nm GaAs-Al_xO_y-GaAs substrates were formed by lateral wet oxidation of patterned GaAs/Al_0.97Ga_0.03As/GaAs heterosructures. Wet digial etching followed by in situ dry iodine etching was used to prepare thin GaAs layers uintended to serve as compliant subsrates. Relaxed layers of In_0.15Ga_0.85As were deposied on the compliant substrates and on bulk GaAs substrates using In_0.15Ga_0.85As and In_0.15Al_0.85As nucleation layers. The In_0.15Ga_0.85As epitaxial layers grown on the compliant substrates using an In_0.15Al_0.85As nucleation laeyr showed no crosshatch pattern by Nomarski microscopy and had X-ray rocking curve linewidths that were narrower than those grown on bulk GaAs or on samples with In_0.15Ga_0.85As nucleation layers.
机译：通过横向湿式氧化图案化的GaAs / Al_0.97Ga_0.03As / GaAs异质结形成大面积16 nm GaAs-Al_xO_y-GaAs衬底。湿法数字刻蚀，然后进行原位干碘刻蚀，用于制备薄的GaAs层，预期将其用作顺应性基板。使用In_0.15Ga_0.85As和In_0.15Al_0.85As成核层将In_0.15Ga_0.85As的松弛层沉积在顺应性衬底上和块状GaAs衬底上。使用In_0.15Al_0.85As成核层在顺应性基板上生长的In_0.15Ga_0.85As外延层在Nomarski显微镜下没有交叉影线图案，并且X射线摇摆曲线的线宽比在块状GaAs或带有GaAs的样品上生长的线宽要窄。 In_0.15Ga_0.85As成核层。

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