Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

著录项

• 来源
  《Applied Surface Science》 |2013年第1期|751-754|共4页
• 作者

  Jyh-Shyang Wang; Yu-Hsuan Tsai; Hsiao-Hua Wang; Han-Xiang Ke; Shih-Chang Tong; Chu-Shou Yang; Chih-Hung Wu; Ji-Lin Shen;

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• 作者单位

  Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan,Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan,No. 200, Chung Pei Rd., Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan;

  Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan;

  Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan;

  Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan;

  Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan;

  Graduate institute of Electro-Optical Engineering, Tatung University, Taipei 10452, Taiwan;

  Institute of Nuclear Energy Research, Longtan 32546, Taiwan;

  Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan,Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  zinc-blende CdSe epilayer; molecular beam epitaxy; Te; reflection high-energy electron diffraction; x-ray diffraction; photoluminescence;

  机译：闪锌矿CdSe外延层;分子束外延;Te;反射高能电子衍射;x射线衍射;光致发光;