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首页> 外文期刊>Journal of Crystal Growth >Growth of highly ordered relaxed InAs/GaAs quantum dots on non-lithographically patterned substrates by molecular beam epitaxy
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Growth of highly ordered relaxed InAs/GaAs quantum dots on non-lithographically patterned substrates by molecular beam epitaxy

机译：通过分子束外延在非光刻图案化的衬底上生长高度有序的弛豫InAs / GaAs量子点

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摘要

Highly ordered arrays of InAs quantum dots are grown on GaAs (100) substrates that have been patterned non-lithographically using self-organized anodized aluminum oxide membranes as an etching mask. The process and benefit of pre-coating the substrate with a protective SiO_2 film are explained in terms of preserving topographic contrast between the etched and unetched regions. The influence of the growth parameters (growth time, InAs rate, and substrate temperature) are determined. In particular, we find that decreased growth temperature enhances the pattern-driven growth mechanism and increases selectivity. Growths with different InAs exposure time reveal the nanopore filling process and a self-limiting dot size. Analysis of high-resolution transmission electron microscopy images suggests that the dots consist of completely relaxed In_xGa_(1-x)As with x = 0.92.
机译：InGaAs（100）衬底上生长有高度有序的InAs量子点阵列，这些衬底已使用自组织的阳极氧化铝膜作为蚀刻掩模进行了非光刻图形化。从保留蚀刻区域和未蚀刻区域之间的形貌对比的角度来解释了用保护性SiO_2膜预涂基材的过程和益处。确定生长参数（生长时间，InAs速率和衬底温度）的影响。特别地，我们发现降低的生长温度增强了图案驱动的生长机制并提高了选择性。具有不同InAs暴露时间的生长揭示了纳米孔填充过程和自限点大小。对高分辨率透射电子显微镜图像的分析表明，这些点由x = 0.92的完全松弛的In_xGa_（1-x）As组成。

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