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首页> 外文期刊>Physical review >Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots
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Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots

机译：弱应变的纳米孔填充GaAs / AlGaAs量子点中的电子g因子消失和长寿命核自旋极化

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摘要

GaAs/AlGaAs quantum dots grown by in situ droplet etching and nanohole in-filling offer a combination of strong charge confinement, optical efficiency, and high spatial symmetry advantageous for polarization entanglement and spin-photon interface. Here, we study experimentally electron and nuclear spin properties of such dots. We find nearly vanishing electron g factors (g_e < 0.05), providing a potential route for electrically driven spin control schemes. Optical manipulation of the nuclear spin environment is demonstrated with nuclear spin polarization up to 65% achieved. Nuclear magnetic resonance spectroscopy reveals two distinct types of quantum dots: with tensile and with compressive strain along the growth axis. In both types of dots, the magnitude of strain Є_b < 0.02% is nearly three orders of magnitude smaller than in self-assembled dots: On the one hand, this provides a route for eliminating a major source of electron spin decoherence arising from nuclear quadrupolar interactions, and on the other hand such strain is sufficient to suppress nuclear spin diffusion leading to a stable nuclear spin bath with nuclear spin lifetimes exceeding 500 s. The spin properties revealed in this work make this new type of quantum dot an attractive alternative to self-assembled dots for the applications in quantum information technologies.
机译：通过原位液滴蚀刻和纳米孔填充生长的GaAs / AlGaAs量子点提供了强大的电荷限制，光学效率和高空间对称性的组合，有利于偏振纠缠和自旋光子界面。在这里，我们通过实验研究此类点的电子和核自旋特性。我们发现几乎消失的电子g因子（g_e <0.05），为电驱动的自旋控制方案提供了一条潜在途径。证明了对核自旋环境的光学操纵，实现了高达65％的核自旋极化。核磁共振波谱揭示了两种不同类型的量子点：沿着生长轴具有拉伸和压缩应变。在两种类型的点中，Є_b<0.02％的大小都比自组装点小近三个数量级：一方面，这为消除核四极引起的电子自旋退相干的主要来源提供了一条途径。在另一方面，这种应变足以抑制核自旋扩散，从而导致稳定的核自旋浴，核自旋寿命超过500 s。这项工作揭示的自旋特性使这种新型的量子点成为自组装点的诱人替代品，适用于量子信息技术。

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  • 来源
    《Physical review》 |2016年第16期|165306.1-165306.12|共12页
  • 作者

    A. Ulhaq; Q. Duan; E. Zallo; F. Ding; O. G. Schmidt; A. I. Tartakovskii; M. S. Skolnick; E. A. Chekhovich;

  • 作者单位

    Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;

    Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;

    Institute for Integrative Nanoscience, IFW Dresden, Helmholtz str. D-01069, Dresden, Germany,Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

    Institute for Integrative Nanoscience, IFW Dresden, Helmholtz str. D-01069, Dresden, Germany;

    Institute for Integrative Nanoscience, IFW Dresden, Helmholtz str. D-01069, Dresden, Germany;

    Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;

    Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;

    Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom;

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