Interplay between nanometer-scale strain variations and externally applied strain in graphene

G. J. Verbiest; C. Stampfer; S. E. Huber; M. Andersen; K. Reuter

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Interplay between nanometer-scale strain variations and externally applied strain in graphene

机译：石墨烯中纳米级应变变化与外加应变之间的相互作用

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We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the nonlinear elastic properties of graphene, both trends together yield a nonmonotonic variation of the total displacements with increasing tensile strain. This variation allows us to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.

机译：我们目前进行的分子建模研究分析了石墨烯中纳米级应变变化作为外部施加的拉伸应变的函数。我们考虑了可能是纳米级应变变化基础的两种不同机制：来自底层衬底的晶格缺陷的静态扰动和热波动。对于这两种情况，我们都观察到随着应变的增加，平面外原子位移减小，同时伴随着平面内位移增加。反映石墨烯的非线性弹性特性，这两种趋势共同导致总位移随拉伸应变的增加而发生非单调变化。这种变化使我们能够测试纳米级应变变化在限制高质量石墨烯样品的载流子迁移率中的作用。

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《Physical review》 |2016年第19期|195438.1-195438.9|共9页
作者
G. J. Verbiest; C. Stampfer; S. E. Huber; M. Andersen; K. Reuter;
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JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany;

JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany;

Theoretical Chemistry and Catalysis Research Center, Technische Universitaet Muenchen, Lichtenbergstr. 4, 85747 Garching, Germany;

Theoretical Chemistry and Catalysis Research Center, Technische Universitaet Muenchen, Lichtenbergstr. 4, 85747 Garching, Germany;

Theoretical Chemistry and Catalysis Research Center, Technische Universitaet Muenchen, Lichtenbergstr. 4, 85747 Garching, Germany;

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1. Interplay between nanometer-scale strain variations and externally applied strain in graphene [J] . Verbiest G. J., Stampfer C., Huber S. E., Physical review, B . 2016,第19期

机译：石墨烯中纳米级应变变化与外加应变之间的相互作用
2. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes [J] . Chen F., Euaruksakul C., Liu Z., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2011,第32期

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3. Intrinsic stress, mismatch strain, and self-assembly during deposition of thin films subjected to an externally applied force [J] . Sang-Hyun Kim, James G. Boyd IV Journal of Mechanical Science and Technology . 2008,第11期

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机译：搅拌摩擦焊的温度，应变和应变率特性大变化时的本构定律及其预测流动应力的能力的评估。
6. Raman spectroscopy as probe of nanometre-scale strain variations in graphene [O] . C. Neumann, S. Reichardt, P. Venezuela, -1

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7. Interplay between nanometer-scale strain variations and externally applied strain in graphene [O] . Verbiest, G. J., Stampfer, Christoph, Huber, S. E., 2016

机译：石墨烯中纳米级应变变化与外加应变之间的相互作用

Interplay between nanometer-scale strain variations and externally applied strain in graphene

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