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Atomistic view of impurities interacting with a quasi-one-dimensional charge density wave

机译：杂质与准一维电荷密度波相互作用的原子观

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摘要

Atomistic details of the interaction of impurities with quasi-one-dimensional charge density wave (CDW) are revealed by scanning tunneling microscopy. Oxygen and pentacene adsorbates are utilized as strongly and weakly interacting impurities, respectively, on the well-known CDW state of the In atomic wire array on the Si(111) surface. Distinct CDW pinning configurations are identified for oxygen impurities with different atomic structures, indicating the strong pinning. The governing role of local strain field for the strong pinning is elucidated. In contrast, a few different pinning configurations occur for a unique adsorption structure of pentacene indicating a weak pinning. Pentacene molecules commonly induce characteristic phase shifts, which readily couple with other phase defects, in particular, solitons in order to avoid interwire phase misfits. This work provides the mechanism and methodology for the atomic scale control over phases, solitons, and domain boundaries of CDW.
机译：通过扫描隧道显微镜揭示了杂质与准一维电荷密度波（CDW）相互作用的原子学细节。在众所周知的Si（111）表面In原子线阵列的CDW状态下，氧气和并五苯吸附物分别被用作强相互作用和弱相互作用的杂质。对于具有不同原子结构的氧杂质，确定了不同的CDW钉扎配置，表明钉扎牢固。阐明了局部应变场对强钉扎的控制作用。相反，并五苯的独特吸附结构会发生几种不同的钉扎结构，表明钉扎较弱。并五苯分子通常诱发特征性相移，其容易与其他相缺陷（特别是孤子）耦合，以避免导线间相失配。这项工作提供了对CDW的相，孤子和域边界进行原子尺度控制的机制和方法。

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  • 来源
    《Physical review》 |2016年第23期|235448.1-235448.5|共5页
  • 作者

    Deok Mahn Oh; Han Woong Yeom;

  • 作者单位

    Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 790-784, Korea and Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 790-784, Korea and Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea;

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