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Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

机译：GaAs：Mn / AlGaAs量子阱中自旋的光学取向通过杂质到带的激发

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摘要

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.
机译：该论文报道了在掺有Mn的窄GaAs / AlGaAs量子阱中进行的光学取向实验。我们通过实验证明了通过杂质带激发通过光学取向控制自旋极化，并观察了根据泵浦功率的发光极化的符号反转。还发现由于量子限制效应，位于量子阱中Mn受体上的空穴的g因子从其体积值被显着地改变。该发现表明了局部环境对半导体纳米结构中掺杂剂的磁性的重要性。

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  • 来源
    《Physical review》 |2016年第8期|085308.1-085308.8|共8页
  • 作者

    P. V. Petrov; I. A. Kokurin; Yu. L. Ivanov; N. S. Averkiev; R. P. Campion; B. L. Gallagher; P. M. Koenraad; A. Yu. Silov;

  • 作者单位

    Ioffe Institute, St. Petersburg, Russian Federation;

    Ioffe Institute, St. Petersburg, Russian Federation,Institute of Physics and Chemistry, Mordovia State University, Saransk, Russian Federation;

    Ioffe Institute, St. Petersburg, Russian Federation;

    Ioffe Institute, St. Petersburg, Russian Federation;

    School of Physics and Astronomy, University of Nottingham, Nottingham, United Kingdom;

    School of Physics and Astronomy, University of Nottingham, Nottingham, United Kingdom;

    Department of Applied Physics, Eindhoven University of Technology, The Netherlands;

    Department of Applied Physics, Eindhoven University of Technology, The Netherlands;

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