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Picosecond charge transport in rutile at high carrier densities studied by transient terahertz spectroscopy

机译:瞬变太赫兹光谱研究高载流子密度下金红石中的皮秒电荷传输

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摘要

We study terahertz photoconductivity of a rutile single crystal between 10 and 300 K under strong photoexcitation by femtosecond pulses at 266 nm. A marked dependence of the carrier mobility on the carrier density is observed leading to highly complex transport phenomena on a picosecond time scale. We develop a general model of carrier photoconductive response in the case of time dependent inhomogeneous distribution of carrier density and mobility. This allows us to assess an important role of both electrons and holes in the response of photoexcited rutile. At low temperatures, the carrier mobility is initially reduced due to the electron-hole scattering and increases by one order of magnitude upon ambipolar diffusion of the carriers into deeper regions of the sample. At room temperature, contributions of transient hot optical phonons and/or of midinfrared polaron excitations with charge-density-dependent dielectric strength emerge in the photoconductivity spectra.
机译:我们研究了飞秒脉冲在266 nm处强光激发下10至300 K之间的金红石单晶的太赫兹光电导性。观察到载流子迁移率对载流子密度的显着依赖性,导致在皮秒级的时间尺度上高度复杂的传输现象。在载流子密度和迁移率与时间有关的不均匀分布的情况下,我们建立了载流子光电导响应的一般模型。这使我们能够评估电子和空穴在光激发金红石反应中的重要作用。在低温下,由于电子空穴的散射,载流子迁移率最初会降低,并且在载流子向样品的较深区域扩散时会增加一个数量级。在室温下,瞬态热光子和/或具有依赖于电荷密度的介电强度的中红外极化子激发的贡献出现在光电导光谱中。

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  • 来源
    《Physical review》 |2016年第11期|115206.1-115206.9|共9页
  • 作者

    V. Zajac; H. Nemec; P. Kuzel;

  • 作者单位

    Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic,Institute of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentska 95, 532 10 Pardubice, Czech Republic;

    Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic;

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