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Excitonic Stark effect in MoS_2 monolayers

机译：MoS_2单层中的激子斯塔克效应

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摘要

We theoretically investigate excitons in MoS_2 monolayers in an applied in-plane electric field. Tight-binding and Bethe-Salpeter equation calculations predict a quadratic Stark shift, of the order of a few meV for fields of 10 V/μm, in the linear absorption spectra. The spectral weight of the main exciton peaks decreases by a few percent with an increasing electric field due to the exciton field ionization into free carriers as reflected in the exciton wave functions. Subpicosecond exciton decay lifetimes at fields of a few tens of V/μm could be utilized in solar energy harvesting and photodetection. We find simple scaling relations of the exciton binding, radius, and oscillator strength with the dielectric environment and an electric field, which provides a path to engineering the M0S2 electro-optical response.
机译：我们在理论上研究平面电场中MoS_2单层中的激子。紧束缚和Bethe-Salpeter方程计算可预测线性吸收光谱中的二次Stark位移，对于10 V /μm的电场，其二次mek量级为几个meV。主激子峰的频谱权重随电场的增加而降低百分之几，这是因为激子场函数中所反映的激子场电离成自由载流子。在几十V /μm的电场下，亚皮秒激子衰变寿命可用于太阳能收集和光探测。我们发现激子结合，半径和振荡器强度与介电环境和电场之间的简单比例关系，为工程M0S2电光响应提供了一条途径。

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  • 来源
    《Physical review》 |2016年第24期|245434.1-245434.8|共8页
  • 作者

    Benedikt Scharf; Tobias Frank; Martin Gmitra; Jaroslav Fabian; Igor Zutic; Vasili Perebeinos;

  • 作者单位

    Department of Physics, University at Buffalo, State University of New York, Buffalo, New York 14260, USA,Skolkovo Institute of Science and Technology, 3 Nobel St., Moscow 143026, Russia;

    Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany;

    Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany;

    Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany;

    Department of Physics, University at Buffalo, State University of New York, Buffalo, New York 14260, USA;

    Skolkovo Institute of Science and Technology, 3 Nobel St., Moscow 143026, Russia;

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