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首页> 外文期刊>Physical review >Charge transport in nanocrystalline SiC with and without embedded Si nanocrystals
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Charge transport in nanocrystalline SiC with and without embedded Si nanocrystals

机译：带有和不带有嵌入式Si纳米晶体的纳米SiC中的电荷传输

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摘要

Charge transport in nanocrystalline SiC with and without embedded Si nanocrystals (Si NCs) prepared by annealing of α-Si_(1-x)C_x:H precursors is studied using temperature-dependent current-voltage measurements supported by electron spin resonance and mass spectrometry data. Transport is Ohmic in all films at all temperatures and the temperature dependence of conductivity shows that the materials behave as disordered semiconductors, exhibiting extended-state transport at high temperature and variable-range hopping transport at low temperature. Grain-boundary-, surface-, and interface-dominated transport is systematically ruled out. Films are n type, and films with Si NCs exhibit up to 10~3 times higher conductivity (up to 0.1 S cm~(-1)) after exposure to a hydrogen plasma which passivates dangling bonds, particularly on Si NCs. A forming gas anneal does not have such an effect, indicating that atomic rather than molecular hydrogen is required. The conductivity of SiC films without Si NCs is largely unchanged by passivation and the Fermi level is not raised nearly as closely to the conduction band. This is attributed to a type Ⅰ band offset between Si NCs and SiC that leads to extended-state conduction in films with Si NCs taking place in a Si network. This is confirmed by the dependence of the extended-state mobility on the volume fraction of excess Si. Variable-range hopping is relatively insensitive to the presence of excess Si and is hence considered to take place via shallow defect states throughout the volume of the films. The high conductivities are found to be a consequence of background doping by oxygen and nitrogen.
机译：使用电子自旋共振和质谱数据支持的随温度变化的电流-电压测量研究了具有和不具有通过对α-Si_（1-x）C_x：H前体进行退火而制备的嵌入式Si纳米晶体（Si NCs）的纳米SiC中的电荷传输。 。在所有温度下，所有薄膜的传输都是欧姆性的，导电率的温度依赖性表明材料表现为无序半导体，在高温下表现出扩展态传输，在低温下表现出可变范围跳跃传输。系统地排除了谷物边界，表面和界面主导的运输。薄膜是n型，具有Si NCs的薄膜在暴露于钝化悬挂键的氢等离子体后，尤其是在Si NCs上，呈现出高达10〜3倍的导电率（高达0.1 S cm〜（-1））。形成气体退火不具有这种效果，表明需要原子而不是分子氢。无Si NCs的SiC薄膜的电导率因钝化而基本保持不变，并且费米能级没有提高到接近导带的程度。这归因于Si NCs和SiC之间的Ⅰ型能带偏移，它导致在Si网络中发生Si NCs的薄膜中发生扩展态导通。这由扩展态迁移率对过量Si的体积分数的依赖性所证实。可变范围跳变对过量Si的存在相对不敏感，因此被认为是通过整个薄膜体积中的浅缺陷状态发生的。发现高电导率是氧和氮的背景掺杂的结果。

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  • 来源
    《Physical review》 |2015年第19期|195317.1-195317.15|共15页
  • 作者

    M. Schnabel; M. Canino; S. Kuehnhold-Pospischil; J. Lopez-Vidrier; T. Klugermann; C. Weiss; L. Lopez-Conesa; M. Zschintzsch-Dias; C. Summonte; P. Loeper; S. Janz; P. R. Wilshaw;

  • 作者单位

    Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany,Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH, United Kingdom;

    Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e i Microsistemi, via Gobetti 101, 40129 Bologna, Italy;

    Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany,Institute for Physical Chemistry, Albert-Ludwigs-Universitaet Freiburg, Albertstr. 21, 79104 Freiburg, Germany;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti i Franques 1, 08028 Barcelona, Spain;

    Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany;

    Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti i Franques 1, 08028 Barcelona, Spain;

    Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e. V, Bautzner Landstrasse 400, 01328 Dresden, Germany;

    Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e i Microsistemi, via Gobetti 101, 40129 Bologna, Italy;

    Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany,Ecole Polytechnique Federate de Lausanne, Institute of Microengineering, Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladiere 71b, 2002 Neuchatel 2, Switzerland;

    Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany;

    Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH, United Kingdom;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanocrystalline materials; disordered solids; mobility edges; hopping transport;

    机译：纳米晶体材料;无序固体流动性边缘;跳车运输;

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