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Nanocrystal layer forming method, the mechanical component comprising a nanocrystal layer produced by the method of producing nanocrystalline layer, and a method of manufacturing the machine parts

机译：纳米晶体层形成方法，包括通过该纳米晶体层的制造方法制造的纳米晶体层的机械部件以及机械零件的制造方法

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摘要

PPROBLEM TO BE SOLVED: To provide a nanocrystal layer forming method for stably forming a nanocrystal layer on the surface of a metal product at a low cost, a machine part provided with the nanocrystal layer formed by the nanocrystal layer forming method, and a method for manufacturing the machine part. PSOLUTION: Drilling of a hole part 1 by a drill D is performed for a workpiece W, thereby forming the nanocrystal layer C by imparting large strain to an inner peripheral surface (a front layer part of a machined surface) of the hole part 1. In this case, plastic working not less than at least 7 true strain is imparted to the inner peripheral surface of the hole part 1. A material temperature of the machined surface of the hole part 1 is maintained to not more than A1 and A3 transformation points. As a result, the nanocrystal layer can be stably formed at the low cost on the inner peripheral surface of the hole part 1. PCOPYRIGHT: (C)2007,JPO&INPIT

机译：

要解决的问题：提供一种用于以低成本在金属产品的表面上稳定地形成纳米晶体层的纳米晶体层形成方法，具有通过该纳米晶体层形成方法形成的纳米晶体层的机械零件，以及一种制造机器零件的方法。

解决方案：通过对工件W进行钻头D对孔部1的钻削，从而对孔的内周面（加工面的表层部）施加较大的应变，从而形成纳米晶层C。在这种情况下，对孔部1的内周面施加至少7个真应变以上的塑性加工。将孔部1的加工面的材料温度维持在A1以下。 A3转换点。结果，可以以低成本在孔部1的内周表面上稳定地形成纳米晶体层。

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公开/公告号JP4711629B2

专利类型
公开/公告日2011-06-29

原文格式PDF
申请/专利权人梅本実;戸高義一;株式会社ユニバンス;
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申请/专利号JP20040013487
发明设计人戸高義一;山下晃浩;梅本実;田中修二;
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申请日2004-01-21
分类号B23B35/00;B23C3/00;B23D79/00;B23B1/00;
国家 JP
入库时间 2022-08-21 18:18:19

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