...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields
【24h】

Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields

机译：倾斜磁场中Ge / SiGe量子阱中的强输运各向异性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3 × 10~4. The anisotropy occurs in a wide range of filling factors where it is determined primarily by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.
机译：我们报告了Ge / SiGe量子阱中二维空穴气体中的强传输各向异性，该各向异性仅在同时存在垂直磁场和面内磁场时才会出现。沿和垂直于面内场测量的电阻比可以超过3×10〜4。各向异性在很宽的填充系数范围内发生，主要由倾斜角决定。缺乏没有平面场的显着各向异性，易调谐性以及对较高温度和填充因子的持久性使得该各向异性不同于GaAs / AlGaAs中的向列相。

著录项

  • 来源
    《Physical review》 |2015年第20期|201301.1-201301.5|共5页
  • 作者

    Q. Shi; M. A. Zudov; C. Morrison; M. Myronov;

  • 作者单位

    School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA;

    School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA;

    Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom;

    Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum wells; electronic transport in interface structures; magnetoresistance;

    机译：量子阱接口结构中的电子传输;磁阻;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号