Energy splitting of image states induced by the surface potential corrugation of InAs(111)A

Jesus Martinez-Bianco; Steven C. Erwin; Kiyoshi Kanisawa; Stefan Foelsch

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Energy splitting of image states induced by the surface potential corrugation of InAs(111)A

机译：InAs（111）A的表面电势波纹引起的图像状态的能量分裂

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By means of scanning tunneling spectroscopy (STS), we study the electronic structure of the Ⅲ-Ⅴ semiconductor surface InAs(111)A in the field emission regime (above the vacuum level). At high sample bias voltages (approaching +10 V), a series of well defined resonances are identified as the typical Stark shifted image states that are commonly found on metallic surfaces in the form of field emission resonances (FER). At lower bias voltages, a more complex situation arises. Up to three double peaks are identified as the first three FERs that are split due to their interaction with the periodic surface potential. The high corrugation of this potential is also quantified by means of density functional theory (DFT) calculations. Another sharp resonance not belonging to the FER series is associated with an unoccupied surface state.

机译：通过扫描隧道光谱法（STS），我们研究了在场致发射状态（高于真空水平）下Ⅲ-Ⅴ族半导体表面InAs（111）A的电子结构。在高采样偏置电压（接近+10 V）下，一系列定义明确的共振被识别为典型的斯塔克位移图像状态，通常以场发射共振（FER）的形式出现在金属表面上。在较低的偏置电压下，会出现更复杂的情况。最多三个双峰被确定为前三个FER，由于它们与周期性表面电势的相互作用而被拆分。还可以通过密度泛函理论（DFT）计算来量化这种潜力的高起伏。不属于FER系列的另一个尖锐的共振与未被占用的表面状态有关。

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来源
《Physical review》 |2015年第11期|115444.1-115444.6|共6页
作者
Jesus Martinez-Bianco; Steven C. Erwin; Kiyoshi Kanisawa; Stefan Foelsch;
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作者单位

Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

Center for Computational Materials Science, Naval Research Laboratory, Washington DC 20375, USA;

NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198, Japan;

Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

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正文语种 eng
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关键词
surface states, band structure, electron density of states; scanning tunneling microscopy (including chemistry induced with STM); semiconductor surfaces;

机译：表面态;能带结构;态电子密度;扫描隧道显微镜（包括用STM诱导的化学反应）;半导体表面;

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1. STOCHASTIC SIMULATIONS OF THE TRAPPING OF ETHANE ON PT(111) FROM A REALISTIC POTENTIAL - THE ROLES OF ENERGY TRANSFER PROCESSES AND SURFACE CORRUGATION [J] . Stinnett JA., Tully JC., Madix RJ. The Journal of Chemical Physics . 1996,第8期

机译：乙烷在PT（111）上的真实势能的随机模拟-能量转移过程和表面腐蚀的作用
2. Analytic Many-body Potential For Inas/gaas Surfaces And Nanostructures: Formation Energy Of Inas Quantum Dots [J] . T. Hammerschmidt, P. Kratzer, M. Scheffler Physical review . 2008,第23期

机译：Inas / Gaas表面和纳米结构的多体分析势：Inas量子点的形成能
3. Scattering of xenon from Ni(111): Collision-induced corrugation and energy transfer dynamics [J] . Ellison MD., Zare RN., Matthews CM. The Journal of Chemical Physics . 2000,第4期

机译：氙从Ni（111）的散射：碰撞引起的波纹和能量转移动力学
4. Magnetotransport measurements on the defect-induced conduction electrons near InAs(111) surface [C] . Yukihide Tsuji, Tohru Okamoto International Conference on the Physics of Semiconductors . 2005

机译：磁通传输测量缺陷诱导的INAS（111）表面附近的传导电子
5. Chemical dynamics simulations of energy transfer in surface-induced dissociation, peptide ion collisions with diamond {lcub}111{rcub} and perfluorinated self-assembled monolayer surfaces. [D] . Wang, Jiangping. 2007

机译：在表面诱导的离解，与金刚石{lcub} 111 {rcub}的肽离子碰撞和全氟化自组装单层表面中进行能量转移的化学动力学模拟。
6. Dissociative Chemisorption of O2 on Al(111):Dynamics on a Correlated Wave-Function-Based Potential Energy Surface [O] . Rongrong Yin, Yaolong Zhang, Florian Libisch, -1

机译：O2在Al（111）上的解离化学吸附：基于相关波函数的势能面的动力学
7. Energy splitting of image states induced by the surface potential corrugation of InAs(111)A [O] . Martínez-Blanco, J., Erwin, S. C., Kanisawa, K., 2015

机译：表面电位引起的图像态能量分裂 Inas（111）a的波纹

Energy splitting of image states induced by the surface potential corrugation of InAs(111)A

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