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首页> 外文期刊>Physical review >Thermal conductivity of silicon nitride membranes is not sensitive to stress
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Thermal conductivity of silicon nitride membranes is not sensitive to stress

机译：氮化硅膜的导热性对应力不敏感

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We have measured the thermal properties of suspended membranes from 10 to 300 K for two amplitudes of internal stress (about 0.1 and 1 GPa) and for two different thicknesses (50 and 100 nm). The use of the original 3ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Q's increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [J. Wu and C. C. Yu, Phys. Rev. B 84, 174109 (2011)] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the "dissipation dilution" argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)], which has been introduced in the context of mechanical damping.
机译：我们已经测量了两种内部应力振幅（约0.1和1 GPa）和两种不同厚度（50和100 nm）从10到300 K的悬浮膜的热性能。原始3ω-Volklein方法的使用已允许在较宽的温度范围内提取每个SiN膜的比热和热导率。使用纳米机械技术在氦气温度下测量了相同基板的机械性能。我们的测量结果表明，独立式SiN膜中的热传递不受内部应力的影响。一致地，即使Q随着拉伸应力的增加而增加，机械耗散也不会受到影响。因此，我们证明了吴和于[J． Wu和C.C. Yu，物理学。 Rev. B 84，174109（2011）]在此应力范围内不适用于这种无定形材料。另一方面，我们的结果可以看作是“耗散稀释”论证的自然结果[Y。 L. Huang和P. R. Saulson，Rev。Sci。仪器69，544（1998）]，它是在机械阻尼的背景下引入的。

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