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首页> 外文期刊>Physical review >Quantitative determination of the Mn site distribution in ultrathin Ga_(0.80)Mn_(0.20)As layers with high critical temperatures: A Rutherford backscattering channeling investigation
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Quantitative determination of the Mn site distribution in ultrathin Ga_(0.80)Mn_(0.20)As layers with high critical temperatures: A Rutherford backscattering channeling investigation

机译:高临界温度超薄Ga_(0.80)Mn_(0.20)As层中Mn位置分布的定量测定:Rutherford背散射通道研究

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摘要

The Mn dopant distribution in ultrathin (20 nm) highly doped (nominal x = 0.20) Ga_(1-x)Mn_x As epitaxial films with critical temperatures close to 175 K and magnetization of 100 emu/cm~3 is analyzed by Rutherford backscattering spectrometry (RBS) in a random and channeling configuration. We could quantify the total concentration and the respective fraction of substitutional, interstitial, and random site Mn ions in as-grown and annealed samples. The measured total Mn concentration is x = 0.23. In the as-grown state 30% of the Mn dopant is located on interstitial sites. Thermal annealings at 180 ℃ for several hours monotonically reduce the interstitial Mn fraction to 11%. Simultaneously the fraction of randomly located Mn is increased by the same amount. The substitutional Mn concentration is stable under these annealing conditions. The effective Mn concentration could be increased to x = 0.13. However, the critical temperature does not increase proportionally with the magnetization. A comparison of the magnetization values demonstrates that the interstitial Mn ions are already incorporated during the growth in the form of Mn_(Ga)-Mn_i clusters.
机译:通过Rutherford背散射光谱分析了临界温度接近175 K,磁化强度为100 emu / cm〜3的超薄(20 nm)高掺杂(标称x = 0.20)Ga_(1-x)Mn_x As外延膜中Mn的掺杂分布(RBS)处于随机和信道配置中。我们可以量化生长和退火样品中的总浓度以及置换,间隙和随机位点Mn离子的比例。测得的总Mn浓度为x = 0.23。在成长期状态下,30%的Mn掺杂剂位于间隙位置。在180℃下进行数小时的热退火可以单调地将间隙Mn含量降低至11%。同时,随机定位的Mn的分数增加了相同的数量。在这些退火条件下,置换Mn浓度是稳定的。有效锰浓度可以增加到x = 0.13。但是,临界温度不会随磁化强度成比例增加。磁化值的比较表明,在生长过程中已经以Mn_(Ga)-Mn_i团簇的形式掺入了间隙Mn离子。

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  • 来源
    《Physical review》 |2014年第11期|115323.1-115323.5|共5页
  • 作者单位

    Sorbonne Universites, UPMC Universite Paris 06, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France;

    Sorbonne Universites, UPMC Universite Paris 06, Laboratoire des Materiaux Mesoscopiques et Nanometriques, F-75005, Paris, France;

    Sorbonne Universites, UPMC Universite Paris 06, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France ,CNRS, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France;

    Sorbonne Universites, UPMC Universite Paris 06, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France ,CNRS, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetic semiconductors; spectrometers and spectroscopic techniques; intrinsic properties of magnetically ordered materials;

    机译:磁性半导体光谱仪和光谱技术;磁性有序材料的固有特性;

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