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机译:高临界温度超薄Ga_(0.80)Mn_(0.20)As层中Mn位置分布的定量测定:Rutherford背散射通道研究
Sorbonne Universites, UPMC Universite Paris 06, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France;
Sorbonne Universites, UPMC Universite Paris 06, Laboratoire des Materiaux Mesoscopiques et Nanometriques, F-75005, Paris, France;
Sorbonne Universites, UPMC Universite Paris 06, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France ,CNRS, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France;
Sorbonne Universites, UPMC Universite Paris 06, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France ,CNRS, UMR7588, Institut des NanoSciences de Paris, F-75005, Paris, France;
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;
magnetic semiconductors; spectrometers and spectroscopic techniques; intrinsic properties of magnetically ordered materials;
机译:E-Mode的RF和DC性能的研究IN_(0.80)GA_(0.20)AS / INAS / IN_(0.80)GA_(0.20)作为基于信道的DG-HEMTS,用于未来的Sublilimetre Wave和THz应用程序
机译:通过卢瑟福反向散射/沟道研究在Si(111)衬底上具有低温AlN中间层的GaN层中应变的深度分布
机译:CdSe自组装量子点与Zn_(0.80)Mn_(0.20)Se稀磁半导体层耦合后的激子自旋注入,转移和弛豫动力学
机译:高温下超薄Ga0.80Mn0.20As层中Mn位置分布的定量测定:Rutherford背散射通道研究