Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well

著录项

• 来源
  《Physical review》 |2014年第11期|115308.1-115308.4|共4页
• 作者

  M. Ono; J. Ishihara; G. Sato; S. Matsuzaka; Y. Ohno; H. Ohno;

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• 作者单位

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1 ,Aoba-ku, Sendai 980-8577, Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1 ,Aoba-ku, Sendai 980-8577, Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1 ,Aoba-ku, Sendai 980-8577, Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1 ,Aoba-ku, Sendai 980-8577, Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1 ,Aoba-ku, Sendai 980-8577, Japan ,Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba Japan;

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1 ,Aoba-ku, Sendai 980-8577, Japan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields; nuclear magnetic resonance and relaxation; optically detected magnetic resonance (ODMR); Ⅱ-Ⅵ semiconductors;

  机译：磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;核磁共振和弛豫;光学检测磁共振（ODMR）;Ⅱ-Ⅵ半导体;