Hyperfine clock transitions of bismuth donors in silicon detected by spin-dependent recombination

著录项

• 来源
  《Physical review》 |2014年第15期|155202.1-155202.8|共8页
• 作者

  P. A. Mortemousque; S. Berger; T. Sekiguchi; C. Culan; R. G. Elliman; K. M. Itoh;

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• 作者单位

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan;

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan,Department of Physics, ETH Zurich, CH-8093 Zurich, Switzerland;

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan;

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan;

  Australian National University, Research School of Physics and Engineering, Canberra, ACT 0200, Australia;

  School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  electron paramagnetic resonance and relaxation; charge carriers: generation, recombination, lifetime, and trapping; elemental semiconductors;

  机译：电子顺磁共振和弛豫;电荷载体：产生;重组;寿命和捕获;元素半导体;