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Valence-band structure of highly efficient p-type thermoelectric PbTe-PbS alloys

机译:高效p型热电PbTe-PbS合金的价带结构

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摘要

Experimental evidence is given relevant to the temperature dependence of the valence band structure of PbTe and PbTe_(1-x)S_x alloys (0.04 ≤ x ≤ 0.12), and its effect on the thermoelectric figure of merit ZT. The x = 0.08 sample has ZT ~ 1.55 at 773 K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (>10~(19) cm~(-3)) Na-doped PbTe_(1-x)S_x reveals the presence of high-mobility electrons. This casts doubts on prior analyses of the Hall coefficient suggesting that temperature induces a rapid rise in energy of the "heavy" hole relative to the "light" hole bands. The electron-like behavior is likely induced by the topology of the Fermi surface when the L- and Σ -bands merge. Negative values for the low-temperature thermopower are also observed. The data show that PbTe continues to be a direct-gap semiconductor at temperatures where the ZT and S~2σ of p-type PbTe are optimal, e.g., 700-800 K.%045203-1
机译:实验证据与PbTe和PbTe_(1-x)S_x合金(0.04≤x≤0.12)的价带结构的温度相关性及其对品质因数ZT的影响有关。 x = 0.08样品在773 K时ZT〜1.55。重掺杂p型(> 10〜(19)cm〜(-3))Na掺杂PbTe_(1-的高温霍尔电阻率与磁场有关x)S_x揭示了高迁移率电子的存在。这使人们对霍尔系数的先前分析产生了怀疑,表明温度引起“重”孔的能量相对于“轻”孔带的能量快速上升。当L波段和Σ波段合并时,费米表面的拓扑可能诱发类似电子的行为。还观察到了低温热电势的负值。数据表明,在p型PbTe的ZT和S〜2σ最适的温度(例如700-800 K.)下,PbTe仍然是直接隙半导体。%045203-1

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  • 来源
    《Physical review》 |2013年第4期|469-478|共10页
  • 作者单位

    Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA;

    Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA;

    High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA;

    High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA;

    Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA,Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA;

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  • 正文语种 eng
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  • 关键词

    semiconductor compounds; galvanomagnetic and other magnetotransport effects; thermoelectric and thermomagnetic effects;

    机译:半导体化合物电磁和其他磁传输效应;热电和热磁效应;

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