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首页> 外文期刊>Physical review >Strong optical polarization in nonpolar (1100) Al_xGa_(1-x)N/AlN quantum wells
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Strong optical polarization in nonpolar (1100) Al_xGa_(1-x)N/AlN quantum wells

机译：非极性（1100）Al_xGa_（1-x）N / AlN量子阱中的强光偏振

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摘要

The optical polarization properties in nonpolar (1100) Al_xGa_(1-x)N/AlN quantum wells (QWs) are investigated over the full range of Al compositions. The k · p calculation predicts that the lowest energy optical transition in (1100) Al_xGa_(1-x)N layers pseudomorphically grown on unstrained A1N is dipole allowed for the electric field vector parallel to the [0001] direction, and that the degree of polarization is hardly affected by the Al_xGa_(1-x)N QW width regardless of the Al composition. Experimentally, Al_xGa_(1-x)N/AlN QWs (0 ≤ x ≤ 0.81) are homoepitaxially grown on A1N substrates. Photoluminescence spectroscopy reveals that the emissions of all QWs, including GaN/AlN QWs, are strongly polarized along the [0001] direction. This result agrees with the theoretical prediction.%041306-1
机译：在整个Al成分范围内研究了非极性（1100）Al_xGa_（1-x）N / AlN量子阱（QWs）中的光学偏振特性。 k·p计算预测，在平行于[0001]方向的电场矢量中，偶极允许在无应变AlN上拟态生长的（1100）Al_xGa_（1-x）N层中的最低能量光学跃迁为偶极子。无论Al成分如何，极化几乎不受Al_xGa_（1-x）N QW宽度的影响。实验上，Al_xGa_（1-x）N / AlN QW（0≤x≤0.81）在AlN衬底上同质外延生长。光致发光光谱法表明，包括GaN / AlN QW在内的所有QW的发射都沿[0001]方向强烈极化。该结果与理论预测相符。％041306-1

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  • 来源
    《Physical review》 |2013年第4期|69-73|共5页
  • 作者

    Mitsuru Funato; Kazuhisa Matsuda; Ryan G. Banal; Ryota Ishii; Yoichi Kawakami;

  • 作者单位

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    quantum wells; Ⅲ-Ⅴ semiconductors; quantum wells; quantum wells;

    机译：量子阱Ⅲ-Ⅴ族半导体;量子阱量子阱;

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