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Theoretical 2D Raman band of strained graphene

机译:应变石墨烯的理论二维拉曼带

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摘要

We study the 2D Raman band of in-plane uniaxially strained graphene within a nonorthogonal tight-binding model. At nonzero strain, the obtained 2D band splits into two subbands at strain angles 0° and 30° or into three subbands at intermediate angles. The evolution of the 2D subbands is calculated systematically in the range of the accessible strains from - 1 % to 3% and for the commonly used laser photon energy from 1.5 to 3.0 eV. The strain rate and dispersion rate of the 2D subbands are derived and tabulated. In particular, these two quantities show large variations up to 50%. The results on the 2D subbands can be used for detecting and monitoring strain in graphene for nanoelectronics applications.
机译:我们研究了非正交紧密结合模型中平面单轴应变石墨烯的二维拉曼谱带。在非零应变下,所获得的2D带将以0°和30°的应变角分为两个子带,或者以中间角分为三个子带。在可访问应变范围-1%至3%以及常用激光光子能量范围为1.5至3.0 eV的范围内,系统地计算了2D子带的演变。导出并列出2D子带的应变率和色散率。特别地,这两个数量显示出高达50%的较大变化。二维子带上的结果可用于检测和监测石墨烯中的应变,以用于纳米电子应用。

著录项

  • 来源
    《Physical review》 |2013年第15期|155425.1-155425.7|共7页
  • 作者单位

    Faculty of Physics, University of Sofia, BG-1164 Sofia, Bulgaria;

    Research Center in Physics of Matter and Radiations, University of Namur (FUNDP), B-5000 Namur, Belgium;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    infrared and raman spectra;

    机译:红外光谱和拉曼光谱;

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