...
机译:具有自然点缺陷的N掺杂石墨烯的电子结构
Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan;
Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan;
Condensed Matter Science Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan;
Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan,Research Center for Integrated Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan;
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan;
ab initio calculations of adsorbate structure and reactions; surface structure, reactivity and catalysis; surface and interface chemistry; heterogeneous catalysis atrnsurfaces;
机译:单层,双层和N掺杂石墨烯中缺陷控制的电子传输:理论
机译:用吡啶和石墨边缘的N掺杂石墨烯纳米筋的能量和电子结构
机译:黑色磷烯/ N掺杂石墨烯异质结构的第一个原理研究:电子,机械和界面性能
机译:Si-掺杂GaN(0001)表面上本地点缺陷的电子结构和光学性质
机译:磷酸锆锗和黄铜矿中缺陷电子结构的第一性原理研究。
机译:通过固体源掺杂技术实现低本征缺陷密度的N掺杂石墨烯
机译:具有原点缺陷的N掺杂石墨烯电子结构
机译:在掺杂N的石墨烯中连接具有电子结构的掺杂键型。