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Electronic structure of N-doped graphene with native point defects

机译:具有自然点缺陷的N掺杂石墨烯的电子结构

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摘要

Nitrogen doping in graphene has important implications in graphene-based devices and catalysts. We have performed the density functional theory calculations to study the electronic structures of N-doped graphene with vacancies and Stone-Wales defect. Our results show that monovacancies in graphene act as hole dopants and that two substitutional N dopants are needed to compensate for the hole introduced by a monovacancy. On the other hand, divacancy does not produce any free carriers. Interestingly, a single N dopant at divacancy acts as an acceptor rather than a donor. The interference between native point defect and N dopant strongly modifies the role of N doping regarding the free carrier production in the bulk π bands. For some of the defects and N dopant-defect complexes, localized defect π states are partially occupied. Discussion on the possibility of spin polarization in such cases is given. We also present qualitative arguments on the electronic structures based on the local bond picture. We have analyzed the 1s-related x-ray photoemission and adsorption spectroscopy spectra of N dopants at vacancies and Stone-Wales defect in connection with the experimental ones. We also discuss characteristic scanning tunneling microscope (STM) images originating from the electronic and structural modifications by the N dopant-defect complexes. STM imaging for small negative bias voltage will provide important information about possible active sites for oxygen reduction reaction.
机译:石墨烯中的氮掺杂在基于石墨烯的装置和催化剂中具有重要意义。我们已经进行了密度泛函理论计算,以研究具有空位和Stone-Wales缺陷的N掺杂石墨烯的电子结构。我们的结果表明,石墨烯中的单空位充当空穴掺杂剂,并且需要两个取代的N掺杂剂来补偿由单空位引入的空穴。另一方面,空缺不会产生任何自由承运人。有趣的是,空位状态下的单个N掺杂剂充当受体而不是施主。自然点缺陷和N掺杂剂之间的干扰极大地改变了N掺杂在体π波段中产生自由载流子方面的作用。对于某些缺陷和N个掺杂物-缺陷复合物,局部缺陷π状态被部分占据。讨论了在这种情况下自旋极化的可能性。我们还基于本地键合图对电子结构进行定性论证。我们结合实验结果分析了空位和Stone-Wales缺陷下N掺杂剂的1s相关x射线光发射和吸附光谱。我们还讨论了特征扫描隧道显微镜(STM)图像,这些图像源自N掺杂物缺陷复合物的电子和结构修饰。较小负偏压的STM成像将提供有关氧还原反应可能的活性位的重要信息。

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  • 来源
    《Physical review》 |2013年第16期|165401.1-165401.16|共16页
  • 作者单位

    Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan;

    Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan;

    Condensed Matter Science Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan;

    Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan,Research Center for Integrated Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan;

    Department of Applied Chemistry, The University of Tokyo, 7-3-1 Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 S5-20, Ookayama, Tokyo 152-8552, Japan;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    ab initio calculations of adsorbate structure and reactions; surface structure, reactivity and catalysis; surface and interface chemistry; heterogeneous catalysis atrnsurfaces;

    机译:从头计算吸附物的结构和反应;表面结构;反应性和催化作用;表面和界面化学非均相催化表面;

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