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机译:硅表面上的表面光电压的振荡弛豫
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;
Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan;
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;
electron states at surfaces and interfaces; photoemission and photoelectron spectra;
机译:Si(111)7×7表面上光电压效应振荡弛豫的非线性动力学模型
机译:时间分辨光发射光谱法研究原子控制的半导体表面上的表面光电压效应的弛豫
机译:使用表面光电压技术监测从硅表面去除化学氧化物
机译:交流表面光电压技术研究硅片表面金属诱导的氧化物电荷的基本方法
机译:环境对纳米结构硅中电荷动力学影响的表面光电压研究。
机译:在不同环境下对裸露和填充Ni的多孔硅进行瞬态表面光电压研究
机译:在不同环境下对裸露和填充Ni的多孔硅进行瞬态表面光电压研究
机译:在清洁的n和p-GaN(0001)表面上的能带弯曲和光发射诱导的表面光伏。