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Oscillatory relaxation of surface photovoltage on a silicon surface

机译:硅表面上的表面光电压的振荡弛豫

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摘要

Time-resolved measurement of photoemission spectroscopy was made to trace a change of surface potential after the surface photovoltage effect on a Si(111) 7 × 7 surface. Two relaxation processes were found with decay times of nanoseconds and hundreds of nanoseconds, which are explained in terms of the tunneling and the thermionic relaxation schemes, respectively. At the high laser power density, the relaxation has become oscillatory with a temporal period of several tens of nanoseconds.
机译:进行时间分辨的光发射光谱测量,以追踪在Si(111)7×7表面上的表面光电压效应后表面电势的变化。发现了两个弛豫过程,其衰减时间分别为纳秒和数百纳秒,分别通过隧穿和热电子弛豫方案进行了解释。在高激光功率密度下,弛豫已经以几十纳秒的时间周期振荡。

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  • 来源
    《Physical review》 |2013年第23期|235308.1-235308.4|共4页
  • 作者单位

    Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

    Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan;

    Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan;

    Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan;

    Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electron states at surfaces and interfaces; photoemission and photoelectron spectra;

    机译:表面和界面的电子态;光发射和光电子能谱;

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