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机译:In_(0.5)Ga_(0.5)As / GaP量子点耦合到光子晶体腔的光致发光
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA;
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA;
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA;
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA;
E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA;
quantum dots; visible and ultraviolet sources; quantum dots;
机译:二维光子晶体对In_(0.5)Ga_(0.5)As / In_(0.05)Ga_(0.95)As量子点的发光调谐
机译:原子层分子束外延生长具有不同数量堆叠的In_(0.5)Ga_(0.5)As量子点的光学和结构性质:弱耦合量子点的垂直重新排列
机译:GaP(001)上In_(0.5)Ga_(0.5)Sb量子点的生长和结构
机译:结合In_(0.21)Al_(0.21)Ga_(0.58)As / GaAs封顶的In_(0.5)Ga_(0.5)As量子点红外光电探测器中载流子限制和暗电流最小化的研究
机译:与量子点集成耦合的光子晶体腔系统中光物质相互作用的理论和建模。
机译:发射近红外光的CdTe0.5Se0.5 / Cd0.5Zn0.5S量子点:合成和明亮的发光
机译:In0.5Ga0.5as / Gap量子点与光子晶体耦合的光致发光 水晶腔
机译:基于量子点光子晶体腔QED的量子信息处理。