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首页> 外文期刊>Physical review >Photoluminescence from In_(0.5)Ga_(0.5)As/GaP quantum dots coupled to photonic crystal cavities
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Photoluminescence from In_(0.5)Ga_(0.5)As/GaP quantum dots coupled to photonic crystal cavities

机译:In_(0.5)Ga_(0.5)As / GaP量子点耦合到光子晶体腔的光致发光

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摘要

We demonstrate room-temperature visible-wavelength photoluminescence from Ino.5Gao.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ≈200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si and is promising for high-efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
机译:我们演示了室温Ino.5Gao.5As嵌入GaP膜中的量子点的可见光光致发光。时间分辨的量子点发射的带上光致发光测量显示了双指数衰减,寿命约为200 ps。我们制造了光子晶体腔,该腔提供了增强的量子点发射输出耦合,可以观察到表示单个量子点发射的细线。该材料系统与Si上的单片集成兼容,并有望用于单量子点发射以及在可见波长下发射的光电器件的高效检测。

著录项

  • 来源
    《Physical review》 |2012年第4期|p.045319.1-045319.5|共5页
  • 作者单位

    E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA;

    E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA;

    Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA;

    Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA;

    E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots; visible and ultraviolet sources; quantum dots;

    机译:量子点;可见光和紫外线源;量子点;

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