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Quantum anomalous Hall effect with tunable Chern number in magnetic topological insulator film

机译:具有可调Chern数的磁性拓扑绝缘膜量子霍尔效应。

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摘要

We study the possibility of realizing quantum anomalous Hall (QAH) effect with tunable Chern number through doping magnetic elements in a multilayer topological insulator film. We find that high Chern number QAH phases exist in ideal neutral samples and can make transition to another QAH phase directly by means of tuning exchange field strength or sample thickness. With the help of an extended Haldane model, we demonstrate the physical mechanism of the tunable Chern number QAH phase. We show that the high Chern number QAH phases are robust against weak magnetic and nonmagnetic disorders.
机译:我们研究了通过在多层拓扑绝缘膜中掺杂磁性元素来实现具有可调Chern数的量子异常霍尔(QAH)效应的可能性。我们发现理想中性样品中存在高Chern数QAH相,并且可以通过调整交换场强度或样品厚度直接转变为另一个QAH相。借助扩展的Haldane模型,我们演示了可调Chern数QAH相位的物理机制。我们表明,高Chern数QAH相对于弱磁和非磁紊乱具有鲁棒性。

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