Nonactivated transport of ultradilute two-dimensional hole systems in GaAs field-effect transistors: Interaction versus disorder

著录项

• 来源
  《Physical review》 |2012年第4期|p.041304.1-041304.4|共4页
• 作者

  Jian Huang; L. N. Pfeiffer; K. W. West;

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• 作者单位

  Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA,Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

  Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

  Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  strongly correlated electron systems; heavy fermions; metal-insulator transitions and other electronic transitions; Ⅲ-Ⅴ semiconductors; localization effects (anderson or weak localization);

  机译：强相关电子系统;重费米子金属-绝缘体过渡和其他电子过渡;Ⅲ-Ⅴ族半导体;本地化影响（安德森或弱本地化）;