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Role of applied bias and tip electronic structure in the scanning tunneling microscopy imaging of highly oriented pyrolytic graphite

机译:施加的偏压和尖端电子结构在高取向热解石墨的扫描隧道显微镜成像中的作用

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摘要

Controlled scanning tunneling microscopy (STM) experiments and first-principles simulations show that applied bias can significantly affect the topographic STM contrast of highly oriented pyrolytic graphite (HOPG) measured with W tips in the pure tunneling regime. Depending on the magnitude and polarity of the bias, both the hexagonal and triangular structures were imaged with the same stable tip. Statistical analysis of the experimental data reveals an enhancement of the corrugation amplitude for small negative biases and the occurrence of different contrast reversals at positive biases, whereby the relative brightness of primary and secondary image features is inverted with respect to that for negative biases. Simulations of HOPG imaging with three different W-tip models explain these findings on the basis of tip-convolution effects governed by the subtle interplay of the tip electronic states with different angular and magnetic moments and vacuum decay lengths. Finally, the calculated library of image contrasts and corrugation amplitudes allows us to rationalize the large variety of, sometimes contrasting, STM data on the basis of effects that different tip terminations, compositions, and sharpness have on the STM imaging of HOPG.
机译:受控扫描隧道显微镜(STM)实验和第一性原理模拟表明,施加的偏压可显着影响纯W尖端在纯隧穿条件下测得的高取向热解石墨(HOPG)的形貌STM对比度。根据偏压的大小和极性,六边形和三角形结构均使用相同的稳定尖端成像。实验数据的统计分析表明,对于较小的负偏压,波纹幅度会增强,并且在正偏压下会出现不同的对比度反转,从而使主要和次要图像特征的相对亮度相对于负偏压而言是相反的。使用三种不同的W-tip模型对HOPG成像进行的仿真解释了这些结果,是基于由不同角度和磁矩以及真空衰减长度的尖端电子状态之间的微妙相互作用所控制的尖端卷积效应。最后,所计算的图像对比度和波纹幅度库使我们能够根据不同尖端的端接,组成和清晰度对HOPG STM成像的影响,合理化各种(有时是对比的)STM数据。

著录项

  • 来源
    《Physical review》 |2012年第8期|p.085433.1-085433.15|共15页
  • 作者单位

    Stephenson Institute for Renewable Energy and Surface Science Research Centre, Department of Chemistry, University of Liverpool,L69 3BX Liverpool, United Kingdom;

    The Institute of Scientific and Industrial Research (ISIR), Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research (ISIR), Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research (ISIR), Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan;

    Department of Physics and Astronomy, University College London, Gower Street, WC1E 6BT London, United Kingdom,WPI-AIMR, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    computer modeling and simulation; scanning tunneling microscopy (including chemistry induced with STM);

    机译:计算机建模与仿真;扫描隧道显微镜(包括用STM诱导的化学反应);

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