Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

I. A. Yugova; M. M. Glazov; D. R. Yakovlev; A. A. Sokolova; M. Bayer

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Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

机译：周期性光激发下半导体量子阱和量子点中电子和空穴的相干自旋动力学：共振自旋放大与自旋锁模

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The coherent spin dynamics of resident carriers, electrons, and holes in semiconductor nanostructures is studied theoretically under the conditions of periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed. Accumulation of the spin polarization is manifested either as resonant spin amplification or as mode locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble.

机译：理论上，在使用短激光脉冲和外部磁场的周期性光激发条件下，研究了半导体纳米结构中常驻载子，电子和空穴的相干自旋动力学。分析了单个载子的弛豫时间超过激光脉冲重复周期的载波自旋集合中的自旋极化的产生和去相。自旋极化的积累表现为共振自旋放大或载流子自旋相干的锁模。结果表明，两种状态都有相同的起源，而它们的出现是由光泵浦功率和整体中自旋进动频率的分布决定的。

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《Physical review》 |2012年第12期|p.125304.1-125304.16|共16页
作者
I. A. Yugova; M. M. Glazov; D. R. Yakovlev; A. A. Sokolova; M. Bayer;
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作者单位

Experimentelle Physik 2, Technische Universitdt Dortmund, 44221 Dortmund, Germany,Physical Faculty of St.Petersburg State University, 198504 St. Petersburg, Russia;

Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

Experimentelle Physik 2, Technische Universitdt Dortmund, 44221 Dortmund, Germany,Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

Physical Faculty of St.Petersburg State University, 198504 St. Petersburg, Russia;

Experimentelle Physik 2, Technische Universitdt Dortmund, 44221 Dortmund, Germany;

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optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures;

机译：低维;介观和纳米级材料和结构的光学特性;

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机译：（In，Ga）As量子点集合中的空穴自旋进动：从共振自旋放大到自旋锁模
2. Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble [J] . Schwan A. Applied Physics Letters . 2012,第23期

机译：（In，Ga）As / GaAs量子点系中锁模电子自旋相干的非共振光激发
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机译：（ln，Ga）As / GaAs量子点系中锁模电子自旋相干的非共振光激发
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6. Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot [O] . S. D. Liles, R. Li, C. H. Yang, -1

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7. Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: resonant spin amplification versus spin mode-locking [O] . Yugova, I. A., Glazov, M. M., Yakovlev, D. R., 2011

机译：半导体量子阱中电子和空穴的相干自旋动力学周期性光激发下的阱和量子点：共振自旋放大与自旋锁模

Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

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