Vertical SNS weak-link Josephson junction fabricated from only boron-doped diamond

著录项

• 来源
  《Physical review》 |2012年第18期|p.184516.1-184516.5|共5页
• 作者

  M. Watanabe; R. Kanomata; S. Kurihara; A. Kawano; S. Kitagoh; T. Yamaguchi; Y. Takano; H. Kawarada;

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• 作者单位

  School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;

  School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;

  School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;

  School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;

  School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;

  National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;

  National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;

  School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjyuku-ku, Tokyo 169-8555, Japan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  proximity effects; Andreev effect; SN and SNS junctions; fullerenes and related materials; josephson devices; metal-insulator transitions and other electronic transitions;

  机译：邻近效应;安德列夫效应;SN和SNS交界处;富勒烯及相关物质;约瑟夫森装置;金属绝缘体过渡和其他电子过渡;