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Interplay between sublattice and spin symmetry breaking in graphene

机译：石墨烯中亚晶格和自旋对称性之间的相互作用

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摘要

We study the effect of sublattice symmetry breaking on the electronic, magnetic, and transport properties of two-dimensional graphene as well as zigzag terminated one- and zero-dimensional graphene nanostructures. The systems are described with the Hubbard model within the collinear mean field approximation. We prove that for the noninteracting bipartite lattice with an unequal number of atoms in each sublattice, in-gap states still exist in the presence of a staggered on-site potential ±Δ/2. We compute the phase diagram of both 2D and 1D graphene with zigzag edges, at half filling, defined by the normalized interaction strength U/t and Δ/t, where t is the first neighbor hopping. In the case of 2D we find that the system is always insulating, and we find the U_c(Δ) curve above which the system goes antiferromagnetic. In 1D we find that the system undergoes a phase transition from nonmagnetic insulator for U < U_c(Δ) to a phase with ferromagnetic edge order and antiferromagnetic interedge coupling. The conduction properties of the magnetic phase depend on Δ and can be insulating, conducting, and even half-metallic, yet the total magnetic moment in the system is zero. We compute the transport properties of a heterojunction with two magnetic graphene ribbon electrodes connected to a finite length armchair ribbon and we find a strong spin filter effect.
机译：我们研究了亚晶格对称性破裂对二维石墨烯以及之字形封端的一维和零维石墨烯纳米结构的电子，磁性和传输性质的影响。用共线性平均场近似内的Hubbard模型描述系统。我们证明，对于每个子晶格中原子数不相等的非相互作用二分晶格，在存在交错的现场电势±Δ/ 2的情况下，间隙内状态仍然存在。我们计算了半填充时具有锯齿形边缘的2D和1D石墨烯的相图，该相图由归一化的交互作用强度U / t和Δ/ t定义，其中t是第一个邻居跳跃。在2D情况下，我们发现系统始终处于绝缘状态，并且找到U_c（Δ）曲线，在该曲线上方，系统将变为反铁磁。在1D中，我们发现系统经历了从U

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  • 来源
    《Physical review》 |2012年第19期|p.195433.1-195433.9|共9页
  • 作者

    D. Soriano; J. Fernandez-Rossier;

  • 作者单位

    CIN2 (ICN-CSIC) and Universitaet Autonoma de Barcelona, Catalan Institute of Nanotechnology, Campus UAB, 08193 Bellaterra (Barcelona), Spain,Departamento de Fisica Aplicada, Universidad de Alicante, San Vicente del Raspeig, Spain;

    Departamento de Fisica Aplicada, Universidad de Alicante, San Vicente del Raspeig, Spain,International Iberian Nanotechnology Laboratory, Av. Mestre Jose Veiga, 4715-330 Braga, Portugal;

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  • 正文语种 eng
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  • 关键词

    spin polarized transport in semiconductors;

    机译：半导体中的自旋极化传输;

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