...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Gate control of surface transport in MBE-grown topological insulator (Bi_(1-x)Sb_x)_2Te_3 thin films
【24h】

Gate control of surface transport in MBE-grown topological insulator (Bi_(1-x)Sb_x)_2Te_3 thin films

机译：MBE生长的拓扑绝缘体（Bi_（1-x）Sb_x）_2Te_3薄膜中表面传输的栅极控制

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Topological insulators are quantum materials comprised of an insulating bulk gap and topologically protected metallic surfaces with a Dirac-like band dispersion. To access the Dirac point by transport measurements is a very challenging issue faced in current investigations of these materials. Here we report the electronic state modulation in topological insulator (Bi_(1-x)Sb_x)_2Te_3 thin films by means of an ionic-liquid gating. The films with 20 nm thickness were grown on lattice-matched semi-insulating InP substrates by molecular beam epitaxy; the temperature dependencies of resistance of these films clearly indicate their insulating bulk and metallic surface characteristics. The surface state carriers were systematically controlled by using electric-double-layer transistor (EDLT) configurations with ionic-liquid dielectrics. It was demonstrated that the surface state in the (Bi_(1-x)Sb_xTe_3-based EDLTs is tuned across the Dirac point, showing ambipolar transport in a topological transport regime.
机译：拓扑绝缘体是由绝缘体间隙和具有狄拉克样带状色散的受拓扑保护的金属表面组成的量子材料。通过运输测量来访问狄拉克点是当前对这些材料的研究中面临的非常具有挑战性的问题。在这里，我们报告通过离子液体门控在拓扑绝缘体（Bi_（1-x）Sb_x）_2Te_3薄膜中的电子状态调制。通过分子束外延在晶格匹配的半绝缘InP衬底上生长20 nm厚度的薄膜。这些薄膜电阻的温度依赖性清楚地表明了它们的绝缘体积和金属表面特性。通过使用具有离子液体电介质的双电层晶体管（EDLT）配置，系统地控制了表面态载流子。结果表明，基于（Bi_（1-x）Sb_xTe_3的EDLT中的表面状态在Dirac点上进行了调整，显示了在拓扑传输方式中的双极性传输。

著录项

  • 来源
    《Physical review》 |2012年第4期|p.045319.1-045319.4|共4页
  • 作者

    Sunao Shimizu; Ryutaro Yoshimi; Takafumi Hatano; Kei S. Takahashi; Atsushi Tsukazaki; Masashi Kawasaki; Yoshihiro Iwasa; Yoshinori Tokura;

  • 作者单位

    Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG),RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan;

    Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG),RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan;

    Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG),RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan;

    Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG),RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG),RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG),RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    surface conductivity and carrier phenomena; surface states, band structure, electron density of states; surface double layers, schottky barriers, and work functions; electronic transport phenomena in thin films;

    机译：表面电导率和载流子现象;表面态;能带结构;态电子密度;表面双层;肖特基势垒和功函数;薄膜中的电子传输现象;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号