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首页> 外文期刊>Physical review >Gate-controlled persistent spin helix state in (In,Ga)As quantum wells
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Gate-controlled persistent spin helix state in (In,Ga)As quantum wells

机译：（In，Ga）As量子阱中的门控持久自旋螺旋态

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摘要

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, α and β, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine a ratio α/β ≈ 1 for nongated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magnetotransport experiment, we monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH-type state. A corresponding numerical analysis reveals that such a PSH-type state indeed prevails even in presence of strong cubic SOI, however no longer at α = β.
机译：如果Rashba和Dresselhaus SOI项α和β的强度相等，则在具有自旋轨道相互作用（SOI）的层状半导体中，可以预期具有抑制的自旋弛豫的持久自旋螺旋（PSH）状态。在这里，我们展示了具有强SOI（包括动量项的立方）的二维电子系统中PSH的栅极控制和检测。我们考虑无应变的InGaAs / InAlAs量子阱，并首先通过测量自旋电流和圆形光电流效应来确定非门控结构的比率α/β≈1。在互补磁传输实验中对Rashba SOI强度进行门控调谐后，我们监测了从弱抗局部化到弱抗局部化的完整转换过程，其中弱局部化的出现反映了PSH型状态。相应的数值分析表明，即使在强立方SOI的存在下，这种PSH型状态的确存在，但是在α=β处不再存在。

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  • 来源
    《Physical review》 |2012年第8期|081306.1-081306.5|共5页
  • 作者

    M. Kohda; V. Lechner; Y. Kunihashi; T. Dollinger; P. Olbrich; C. Schoenhuber; I. Caspers; V. V. Belkov; L. E. Golub; D. Weiss; K. Richter; J. Nitta; S. D. Ganichev;

  • 作者单位

    Department of Materials Science, Tohoku University, Sendai 980-8579, Japan,PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Department of Materials Science, Tohoku University, Sendai 980-8579, Japan;

    Institut fuer Theoretische Physik, Universitat Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia;

    Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Theoretische Physik, Universitat Regensburg, D-93040 Regensburg, Germany;

    Department of Materials Science, Tohoku University, Sendai 980-8579, Japan;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

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  • 关键词

    spin-orbit coupling, zeeman and stark splitting, jahn-teller effect; optical creation of spin polarized carriers; spin relaxation and scattering; weak or anderson localization;

    机译：自旋轨道耦合;塞曼和斯塔克分裂;詹恩-泰勒效应;自旋极化载体的光学产生;自旋弛豫和散射;弱或安德森本地化;

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