Metal-insulator transitions in epitaxial LaVO_3 and LaTiO_3 films

著录项

• 来源
  《Physical review》 |2012年第8期|081401.1-081401.4|共4页
• 作者

  C. He; T. D. Sanders; M. T. Gray; F. J. Wong; V. V. Mehta; Y. Suzuki;

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• 作者单位

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720;

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720;

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720;

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720;

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720;

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720,Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  electrical properties of specific thin films; metal-insulator transitions and other electronic transitions; transition-metal compounds;

  机译：特定薄膜的电性能;金属-绝缘体过渡和其他电子过渡;过渡金属化合物;