Feasibility of enhancing the thermoelectric power factor in GaN_xAs_(1-x)

著录项

• 来源
  《Physical review》 |2012年第8期|085314.1-085314.7|共7页
• 作者

  P. Pichanusakorn; Y. J. Kuang; C. Patel; C. W. Tu; P. R. Bandaru;

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• 作者单位

  Materials Science Program, Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093, USA;

  Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA;

  Materials Science Program, Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093, USA;

  Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA;

  Materials Science Program, Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093, USA,Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  charge carriers: generation, recombination, lifetime, and trapping; thermoelectric and thermomagnetic effects; Ⅲ-Ⅴ semiconductors;

  机译：电荷载体：产生;重组;寿命和捕获;热电和热磁效应;Ⅲ-Ⅴ族半导体;