...
首页> 外文期刊>Physical review >Ferroelectric charged domain walls in an applied electric field
【24h】

Ferroelectric charged domain walls in an applied electric field

机译:外加电场中的铁电带电畴壁

获取原文
获取原文并翻译 | 示例
           

摘要

The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in proper ferroelectrics, the free charge carried by the wall is dependent on the size of the adjacent domains. As a result, the mobility of such domain wall (with respect to the applied field) is sensitive to the parameters of the domain pattern containing this wall. The problem of the force acting on a charged planar 180° domain wall normal to the polarization direction in a periodic domain pattern in a proper ferroelectric is analytically solved in terms of Landau theory. In small applied fields (in the linear regime), the force acting on the wall in such pattern increases with decreasing the wall spacing. It is shown that the domain pattern considered is unstable in a defect-free ferroelectric. The poling of a crystal containing such pattern, stabilized by the pinning pressure, is also considered. Except for a special situation, the presence of charge domain walls makes poling more difficult. The results obtained are also applicable to zigzag walls under the condition that the zigzag amplitude is much smaller than the sizes of the neighboring domains.
机译:理论上解决了电场与铁电体中带电畴壁的相互作用。推导了带电荷的带电荷畴壁的每单位面积上作用的力的一般表达式,该力携带自由电荷。结果表明,在适当的铁电体中,壁所携带的自由电荷取决于相邻畴的大小。结果,这种畴壁的迁移率(相对于所施加的场)对于包含该壁的畴图案的参数敏感。根据Landau理论,解析地解决了在适当的铁电体中以周期性畴图案作用于垂直于极化方向的带电平面180°畴壁上的力的问题。在较小的施加场中(在线性状态下),以这种方式作用在壁上的力会随着壁间距的减小而增加。结果表明,在无缺陷的铁电体中,所考虑的畴图案是不稳定的。还考虑了通过钉扎压力稳定的包含这种图案的晶体的极化。除特殊情况外,电荷畴壁的存在使极化变得更加困难。在锯齿形幅度远小于相邻域大小的条件下,所获得的结果也适用于锯齿形壁。

著录项

  • 来源
    《Physical review》 |2012年第10期|p.104104.1-104104.10|共10页
  • 作者单位

    Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland;

    Research Centre for Special Optics and Optoelectronic Systems (TOPTEC), Soboteckd 1660, CZ-51101 Turnov, Czech Republic;

    Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland;

    Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    domain structure; hysteresis; charge carriers: generation, recombination, lifetime, and trapping;

    机译:域结构;磁滞电荷载体:产生;重组;寿命和捕获;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号