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首页> 外文期刊>Physical review >Quantum oscillation of Rashba spin splitting in topological insulator Bi_2Se_3 induced by the quantum size effects of Pb adlayers
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Quantum oscillation of Rashba spin splitting in topological insulator Bi_2Se_3 induced by the quantum size effects of Pb adlayers

机译:Pb掺杂层的量子尺寸效应在拓扑绝缘体Bi_2Se_3中的Rashba自旋分裂的量子振荡

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摘要

Based on first-principles calculations within density functional theory, we find that Pb adlayers can induce a giant Rashba spin splitting in the quantum well states of an underlying Bi_2Se_3 film. As the thickness of the Pb adlayers varies, the distance between the Pb adlayer and the Bi_2Se_3 film, the charge density at the interface, and the binding between the Pb adlayers exhibit an oscillatory behavior due to the quantum size effects, which in turn modulates the magnitude of the Rashba spin splitting of the quantum well states in the Bi_2Se_3 film.
机译:基于密度泛函理论中的第一性原理计算,我们发现Pb附加层可以在下面的Bi_2Se_3薄膜的量子阱态中引起巨大的Rashba自旋分裂。随着Pb附加层厚度的变化,Pb附加层与Bi_2Se_3膜之间的距离,界面处的电荷密度以及Pb附加层之间的键合由于量子尺寸效应而表现出振荡行为,这反过来又调节了Bi_2Se_3薄膜中量子阱态的Rashba自旋分裂的幅度。

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  • 来源
    《Physical review》 |2012年第15期|155317.1-155317.5|共5页
  • 作者单位

    Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, P.R. China Laboratory for Quantum, Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, P.R. China Department of Physics, Jishou University, Hunan 416000, P.R. China;

    Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, P.R. China Laboratory for Quantum, Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, P.R. China;

    Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, P.R. China Laboratory for Quantum, Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, P.R. China;

    Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, P.R. China Laboratory for Quantum, Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, P.R. China;

    Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, P.R. China Laboratory for Quantum, Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, P.R. China;

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  • 正文语种 eng
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  • 关键词

    electron states at surfaces and interfaces; electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; thin film structure and morphology; density functional theory, local density approximation, gradient and other corrections;

    机译:表面和界面的电子态;多层;量子阱;介观和纳米级系统中的电子态和集体激发;薄膜的结构和形态;密度泛函理论;局部密度近似;梯度和其他校正;

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